PF38F5070M0P0B NUMONYX [Numonyx B.V], PF38F5070M0P0B Datasheet

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PF38F5070M0P0B

Manufacturer Part Number

PF38F5070M0P0B

Description

Numonyx Wireless Flash Memory (W18)

Manufacturer

NUMONYX [Numonyx B.V]

Datasheet

1.PF38F5070M0P0B.pdf (102 pages)

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Numonyx™ Wireless Flash Memory (W18)

Product Features

High Performance Read-While-Write/Erase

— Burst frequency at 66 MHz

— 60 ns Initial access read speed

— 11 ns Burst mode read speed

— 20 ns Page mode read speed

— 4-, 8-, 16-, and Continuous-Word Burst

— Burst and Page mode reads in all Blocks,

— Burst Suspend feature

— Enhanced Factory Programming at 3.1 µs/

Security

— 128-Bit OTP Protection Register:

— Absolute Write Protection with V

— Individual and Instantaneous Block Locking/

Quality and Reliability

— Temperature Range: –40 °C to +85 °C

— 100K Erase Cycles per Block

— 90 nm ETOX™ IX Process

— 130 nm ETOX™ VIII Process

(zero wait states)

mode reads

across all partition boundaries

word

64 unique pre-programmed bits +

64 user-programmable bits

Unlocking with Lock-Down Capability

PP

at ground

Architecture

— Multiple 4-Mbit partitions

— Dual Operation: RWW or RWE

— Parameter block size = 4-Kword

— Main block size = 32-Kword

— Top or bottom parameter devices

— 16-bit wide data bus

Software

— 5 µs (typ.) Program and Erase Suspend

— Flash Data Integrator (FDI) and Common

— Programmable WAIT signal polarity

Packaging and Power

— 90 nm: 32- and 64-Mbit in VF BGA

— 130 nm: 32-, 64-, and 128-Mbit in VF BGA

— 130 nm: 128-Mbit in QUAD+ package

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch

— V

— V

— V

— V

— Standby current (130 nm): 8 µA (typ.)

— Read current: 8 mA (4-word burst, typ.)

latency time

Flash Interface (CFI) Compatible

to 1.80 V

CC

CCQ

CCQ

CCQ

= 1.70 V to 1.95 V

(90 nm) = 1.7 V to 1.95 V

(130 nm) = 1.7 V to 2.24 V or 1.35 V

(130 nm) = 1.35 V to 2.24 V

Order Number: 290701-18

Datasheet

November 2007

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