MT47H128M8HQ-37EL MICRON [Micron Technology], MT47H128M8HQ-37EL Datasheet - Page 11
MT47H128M8HQ-37EL
Manufacturer Part Number
MT47H128M8HQ-37EL
Description
DDR2 SDRAM
Manufacturer
MICRON [Micron Technology]
Datasheet
1.MT47H128M8HQ-37EL.pdf
(131 pages)
- Current page: 11 of 131
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Automotive Temperature
General Notes
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
The automotive temperature (AT) option, if offered, has two simultaneous require-
ments: ambient temperature surrounding the device cannot be less than –40°C or
greater than +105°C, and the case temperature cannot be less than –40°C or greater
than +105°C. JEDEC specifications require the refresh rate to double when T
+85°C; this also requires use of the high-temperature self refresh option. Additionally,
ODT resistance and the input/output impedance must be derated when T
+85°C.
• The functionality and the timing specifications discussed in this data sheet are for the
• Throughout the data sheet, the various figures and text refer to DQs as “DQ.” The DQ
• Complete functionality is described throughout the document, and any page or dia-
• Any specific requirement takes precedence over a general statement.
DLL-enabled mode of operation.
term is to be interpreted as any and all DQ collectively, unless specifically stated oth-
erwise. Additionally, the x16 is divided into 2 bytes: the lower byte and the upper byte.
For the lower byte (DQ0–DQ7), DM refers to LDM and DQS refers to LDQS. For the
upper byte (DQ8–DQ15), DM refers to UDM and DQS refers to UDQS.
gram may have been simplified to convey a topic and may not be inclusive of all
requirements.
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16 DDR2 SDRAM
Functional Description
© 2004 Micron Technology, Inc. All rights reserved.
C
is < 0°C or >
C
exceeds
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