M48T02-150PC1TR STMICROELECTRONICS [STMicroelectronics], M48T02-150PC1TR Datasheet - Page 15

• Manufacturer Part Number: M48T02-150PC1TR
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

V
I
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
can be reduced if capacitors are used to store en-
ergy which stabilizes the V
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1µF (as shown in Figure
13) is recommended in order to provide the need-
ed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
below V
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from V
connected to V
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
CC
CC
transients, including those produced by output
Noise And Negative Going Transients
SS
by as much as one volt. These negative
CC
, anode to V
CC
CC
bus. These transients
CC
that drive it to values
CC
SS
bus. The energy
). Schottky diode
to V
SS
(cathode
Figure 13. Supply Voltage Protection
V CC
0.1 F
M48T02, M48T12
V CC
V SS
DEVICE
AI02169
15/19