DAC1408D650C1 NXP [NXP Semiconductors], DAC1408D650C1 Datasheet - Page 10

• Manufacturer Part Number: DAC1408D650C1
• Description: Dual 14-bit DAC up to 650 Msps 2, 4 or 8 interpolating
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
Table 5.
V
typical values measured at V
sample rate; PLL off unless otherwise specified.
[1]
[2]
[3]
[4]
[5]
[6]
DAC1408D650
Preliminary data sheet
Symbol
SFDR
IMD3
ACPR
NSD
DDA(1V8)
D = guaranteed by design; C = guaranteed by characterization; I = 100 % industrially tested.
CLKINP/CLKINN inputs are at differential LVDS levels. An external termination resistor with a value of between 80 Ω and 120 Ω (see
Figure
|V
and the inductance between the receiver and the driver circuit ground voltage.
Vin_p and Vin_n inputs are differential CML inputs. There are terminated internally to V
SYNC_OUTP/SYNC_OUTN outputs are differential LVDS outputs. They must be terminated by a resistor with a value of between 80 Ω
and 120 Ω.
IMD3 rejection with −6 dBFs/tone.
gpd
RBW
| represents the ground potential difference voltage. This is the voltage that results from current flowing through the finite resistance
= V
16) should be connected across the pins.
Characteristics
DDD
Parameter
restricted bandwidth
spurious-free dynamic
range
third-order
intermodulation
distortion
adjacent channel
power ratio
noise spectral density
= 1.7 V to 1.9 V; V
…continued
DDA(1V8)
DDA(3V3)
= V
DDD
Conditions
f
4× interpolation;
f
BW = 100 MHz
f
4× interpolation;
f
BW = 20 Mhz
f
f
4× interpolation
f
f
f
4× interpolation
f
f
f
4× interpolation
NCO on; 4× interpolation; f
1 carrier; BW = 5 MHz
2 carriers; BW = 10 MHz
4 carriers; BW = 20 MHz
NCO on; 4× interpolation; f
1 carrier; BW = 5 MHz
2 carriers; BW = 10 MHz
4 carriers; BW = 20 MHz
f
4× interpolation;
f
DAC1408D; up to 650 Msps; 2×, 4× or 8× interpolating with JESD204A
s
o
s
o
o1
s
o1
o2
s
o1
o2
s
s
o
All information provided in this document is subject to legal disclaimers.
= 640 Msps;
= 640 Msps;
= 640 Msps;
= 640 Msps;
= 640 Msps;
= 640 Msps;
= 133 MHz at −1 dBFS;
= 133 MHz at −1 dBFS;
= 133 MHz at 0 dBFS
= 3.0 V to 3.6 V; AGND and GND are shorted together; T
= 95 MHz; f
= 153.1 MHz;
= 154.1 MHz;
= 137 MHz;
= 143 MHz;
= 1.8 V; V
Rev. 02 — 11 August 2010
DDA(3V3)
o2
= 97 MHz;
= 3.3 V; T
s
s
= 640 Msps; f
= 640 Msps; f
Test
I
C
C
I
C
C
C
C
C
C
C
I
amb
[1]
= +25
[6]
[6]
[6]
tt
o
o
via 50 Ω (see
°
C; R
= 96 MHz
= 133MHz
Min
-
-
-
-
-
-
-
-
-
-
-
-
L
DAC1408D650
= 50
Typ
80
84
79
76
76
72
72
69
71
71
68
−155
Ω
Figure
; I
O(fs)
amb
4).
= 20 mA; maximum
-
-
-
-
-
-
Max
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
=
−
40
°
C to +85
Unit
dBc
dBc
dBc
dBc
dBc
dB
dB
dB
dB
dB
dB
dBc/Hz
10 of 98
°
C;