MC68HC908AS60MFN MOTOROLA [Motorola, Inc], MC68HC908AS60MFN Datasheet - Page 98
MC68HC908AS60MFN
Manufacturer Part Number
MC68HC908AS60MFN
Description
HCMOS Microcontroller Unit
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
1.MC68HC908AS60MFN.pdf
(454 pages)
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EEPROM-1
6.4.8 EEPROM Non-Volatile Register and EEPROM Array Configuration Register
Technical Data
98
NOTE:
Address:
Address:
EEPGM — EEPROM Program/Erase Enable Bit
Writing logic 0s to both the EELAT and EEPGM bits with a single
instruction will clear EEPGM only to allow time for the removal of high
voltage.
The EEPROM non-volatile register (EENVR1) and array configuration
register (EEACR1) are shown in
Reset:
Reset:
Read:
Read:
Write:
Write:
This read/write bit enables the internal charge pump and applies the
programming/erasing voltage to the EEPROM array if the EELAT bit
is set and a write to a valid EEPROM location has occurred. Reset
clears the EEPGM bit.
Freescale Semiconductor, Inc.
Figure 6-3. EEPROM-1 Array Control Register (EEACR1)
For More Information On This Product,
1 = EEPROM programming/erasing power switched on
0 = EEPROM programming/erasing power switched off
Figure 6-2. EEPROM-1 Non-Volatile Register (EENVR1)
$FE1C
$FE1F
EERA
EERA
Bit 7
Bit 7
Go to: www.freescale.com
= Unimplemented
= Unimplemented
CON2
CON2
6
6
EEPROM-1
CON1
CON1
Programmed value or 1 in the erased state
5
5
EEPRTCT
EEPRTCT
Figure 6-2
4
4
EENVR
EEBP3
EEBP3
3
3
and
MC68HC908AS60 — Rev. 1.0
Figure
EEBP2
EEBP2
2
2
6-3.
EEBP1
EEBP1
1
1
MOTOROLA
EEBP0
EEBP0
Bit 0
Bit 0
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