HD6412340 HITACHI [Hitachi Semiconductor], HD6412340 Datasheet - Page 180
HD6412340
Manufacturer Part Number
HD6412340
Description
H8S/2345 F-ZTAT Hardware Manual
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet
1.HD6412340.pdf
(907 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD6412340TE20
Manufacturer:
SANYO
Quantity:
20 000
Part Number:
HD6412340TE20
Manufacturer:
HITACHI/日立
Quantity:
20 000
- Current page: 180 of 907
- Download datasheet (4Mb)
6.5
6.5.1
With the H8S/2345 Series, external space area 0 can be designated as burst ROM space, and burst
ROM interfacing can be performed. The burst ROM space interface enables 16-bit configuration
ROM with burst access capability to be accessed at high speed.
Area 0 can be designated as burst ROM space by means of the BRSTRM bit in BCRH.
Consecutive burst accesses of a maximum of 4 words or 8 words can be performed for CPU
instruction fetches only. One or two states can be selected for burst access.
6.5.2
The number of states in the initial cycle (full access) of the burst ROM interface is in accordance
with the setting of the AST0 bit in ASTCR. Also, when the AST0 bit is set to 1, wait state
insertion is possible. One or two states can be selected for the burst cycle, according to the setting
of the BRSTS1 bit in BCRH. Wait states cannot be inserted. When area 0 is designated as burst
ROM space, it becomes 16-bit access space regardless of the setting of the ABW0 bit in ABWCR.
When the BRSTS0 bit in BCRH is cleared to 0, burst access of up to 4 words is performed; when
the BRSTS0 bit is set to 1, burst access of up to 8 words is performed.
The basic access timing for burst ROM space is shown in figures 6.15 (a) and (b). The timing
shown in figure 6.15 (a) is for the case where the AST0 and BRSTS1 bits are both set to 1, and
that in figure 6.15 (b) is for the case where both these bits are cleared to 0.
Burst ROM Interface
Overview
Basic Timing
161
Related parts for HD6412340
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
LOW FREQUENCY POWER AMPLIFIER
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
SILICON N-CHANNEL JUNCTION FET LOW FREQUECY LOW NOISE AMPLIFIER
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
SILICON SPEED POWER SWITCHING
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
SILICON P-CHANNEL MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
SILICON P-CHANNEL MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
HITACHI [Hitachi Semiconductor]
Datasheet: