HD6433045 HITACHI [Hitachi Semiconductor], HD6433045 Datasheet - Page 699

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HD6433045

Manufacturer Part Number
HD6433045
Description
Hitachi Single-Chip Microcomputer
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet

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21.3.5 Flash Memory Characteristics
Table 21-18 lists the flash memory characteristics.
Table 21-18 Flash Memory
Condition A: V
Condition C: V
Item
Programming time
Erase time
Erase-program cycle
Verify setup time 1
Verify setup time 2
Flash memory read
setup time
Notes: 1. To specify each time, follow the appropriate algorithm.
2. Before reading the flash memory, wait at least for the read setup time after clearing the
*2
*1
V
when the external clock is used; or returning from standby mode. When the V
is cut off, t
flash memory is read.
PP
E bit; lowering the voltage supplied to V
V
+75°C (regular specifications), T
V
+75°C (regular specifications), T
CC
SS
CC
SS
*1
*1
*1
= AV
= AV
= 2.7 V to 5.5 V, AV
= 5.0 V ± 10%, AV
FRS
SS
SS
indicates the time from when the V
Symbol
t
t
N
t
t
t
= 0 V, V
= 0 V, V
P
E
VS1
VS2
FRS
WEC
PP
PP
= 12 V ± 0.6 V, ø = 1 MHz to 8 MHz, T
= 12 V ± 0.6 V, ø = 1 MHz to 16 MHz, T
CC
CC
Min
4
2
50
100
= 5.0 V ± 10%, V
= 2.7 V to 5.5 V, V
691
a
a
= –40°C to +85°C (wide-range specifications)
= –40°C to +85°C (wide-range specifications)
Typ
50
1
PP
from 12 V to 0–5 V; turning on the power
PP
Max
1000
30
100
REF
falls below V
REF
= 4.5 V to AV
= 2.7 V to AV
Unit
µs
s
time
µs
µs
µs
µs
CC
+ 2 V to when the
CC
a
Test Conditions
V
V
a
= –20°C to
CC
CC
CC
,
= –20°C to
,
≥ 4.5 V
< 4.5 V
PP
voltage

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