W25Q16CLDAIG WINBOND [Winbond], W25Q16CLDAIG Datasheet - Page 67
W25Q16CLDAIG
Manufacturer Part Number
W25Q16CLDAIG
Description
2.5V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
Manufacturer
WINBOND [Winbond]
Datasheet
1.W25Q16CLDAIG.pdf
(77 pages)
- Current page: 67 of 77
- Download datasheet (3Mb)
12.7 AC Electrical Characteristics (
Notes:
DESCRIPTION
/HOLD Active Hold Time relative to CLK
/HOLD Not Active Setup Time relative to CLK
/HOLD Not Active Hold Time relative to CLK
/HOLD to Output Low-Z
/HOLD to Output High-Z
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
/CS High to Standby Mode without Electronic
Signature Read
/CS High to Standby Mode with Electronic Signature
Read
/CS High to next Instruction after Suspend
Write Status Register Time
Byte Program Time (First Byte)
Additional Byte Program Time (After First Byte)
Page Program Time
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
1.
2.
3.
4.
5.
Clock high + Clock low must be less than or equal to 1/f
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.
For multiple bytes after first byte within a page,
number of bytes programmed.
Max Value tSE with <50K cycles is 200ms and >50K & <100K cycles is 400ms.
(4)
cont’d)
(4)
t
BPN
- 67 -
=
C
t
.
BP1 +
SYMBOL
t
t
t
t
t
t
HHQX
WHSL
SHWL
HLQZ
RES
RES
t
t
t
t
t
SUS
CHHH
HHCH
CHHL
DP
t
t
t
t
t
t
t
BE
BE
t
BP1
BP2
t
PP
SE
CE
W
BP2 * N
(2)
1
2
(2)
1
2
(2)
(2)
(2)
(2)
(3)
(3)
(typical) and
ALT
t
t
HZ
LZ
Publication Release Date: July 08, 2010
MIN
100
20
t
5
5
5
BPN
=
t
TYP
BP1 +
120
150
2.5
0.7
10
30
30
3
Preliminary - Revision A
SPEC
W25Q16CL
t
BP2 * N
200/400
1000
MAX
(max), where N =
800
1.8
12
20
15
50
12
10
7
3
3
3
(5)
UNIT
ms
ms
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
s
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