NAND02G-B2D NUMONYX [Numonyx B.V], NAND02G-B2D Datasheet - Page 54

• Manufacturer Part Number: NAND02G-B2D
• Description: 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

DC and AC parameters
2. ES = electronic signature.
3.
4. During a program/erase enable operation, t
Figure 24. Command latch AC waveforms
54/69
operation, t
t
ADL
CL
AL
I/O
W
E
is the time from W rising edge during the final address cycle to W rising edge during the first data cycle.
WW
is the delay from WP Low to W High.
(ALSetup time)
H(E Setup time)
(CL Setup time)
tALLWH
tELWH
tCLHWH
(Data Setup time)
tDVWH
WW
is the delay from WP high to W High. During a program/erase disable
Command
tWLWH
tWHDX
(Data Hold time)
(E Hold time)
tWHEH
(CL Hold time)
tWHCLL
(AL Hold time)
tWHALH
NAND02G-B2D
ai12470b