NAND04GW3B2AN1E STMICROELECTRONICS [STMicroelectronics], NAND04GW3B2AN1E Datasheet - Page 53
NAND04GW3B2AN1E
Manufacturer Part Number
NAND04GW3B2AN1E
Description
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.NAND04GW3B2AN1E.pdf
(58 pages)
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NAND04GW3B2B, NAND08GW3B2A
11.1
Ready/Busy Signal Electrical Characteristics
Figure
signal. The value required for the resistor R
So,
where I
max is determined by the maximum value of t
Figure 33. Ready/Busy AC Waveform
Figure 34. Ready/Busy Load Circuit
34,
L
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
Figure 33
and
ready V DD
Figure 35
DEVICE
V SS
V DD
R P min
R P min 1.8V
R P min 3V
t f
show the electrical characteristics for the Ready/Busy
=
V OL
------------------------------------------------------------ -
V DDmax V OLmax
P
=
busy
I OL
=
can be calculated using the following equation:
r
R P
-------------------------- -
8mA
.
-------------------------- -
3mA
Open Drain Output
RB
–
3.2V
+
1.85V
+
I L
+
I L
I L
t r
ibusy
V OH
AI07564B
AI07563B
DC and AC parameters
53/58
P
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