M58LT128HSB8ZA6 NUMONYX [Numonyx B.V], M58LT128HSB8ZA6 Datasheet
M58LT128HSB8ZA6
Manufacturer Part Number
M58LT128HSB8ZA6
Description
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
1.M58LT128HSB8ZA6.pdf
(110 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M58LT128HSB8ZA6
Manufacturer:
ST
Quantity:
10 720
Company:
Part Number:
M58LT128HSB8ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M58LT128HSB8ZA6E
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
M58LT128HSB8ZA6F
Manufacturer:
Numonyx/ST Micro
Quantity:
135
Company:
Part Number:
M58LT128HSB8ZA6F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Features
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December 2007
Supply voltage
– V
– V
– V
Synchronous/Asynchronous Read
– Synchronous Burst Read mode: 52 MHz
– Asynchronous Page Read mode
– Random access: 85 ns
Synchronous Burst Read Suspend
Programming time
– 2.5 µs typical word program time using
Memory organization
– Multiple bank memory array: 8-Mbit banks
– Parameter blocks (top or bottom location)
Dual operations
– program/erase in one bank while read in
– No delay between Read and Write
Block protection
– All blocks protected at power-up
– Any combination of blocks can be protected
– Absolute write protection with V
Security
– Software security features
– 64-bit unique device number
– 2112-bit user programmable OTP Cells
Common flash interface (CFI)
100 000 program/erase cycles per block
and Read
Buffer Enhanced Factory Program
command
others
operations
with zero latency
DD
DDQ
PP
128 Mbit (8 Mb ×16, multiple bank, multilevel interface, burst)
= 9 V for fast program
= 1.7 V to 2.0 V for Program, Erase
= 2.7 V to 3.6 V for I/O buffers
PP
= V
SS
1.8 V supply, secure Flash memories
Rev 3
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Electronic signature
– Manufacturer code: 20h
– Top device codes:
– Bottom device codes
TBGA64 package
– ECOPACK® available
M58LT128HST: 88D6h
M58LT128HSB: 88D7h
TBGA64 (ZA)
M58LT128HSB
M58LT128HST
10 × 13 mm
BGA
www.numonyx.com
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