M58BW016BB100T3T STMICROELECTRONICS [STMicroelectronics], M58BW016BB100T3T Datasheet - Page 31

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M58BW016BB100T3T

Manufacturer Part Number
M58BW016BB100T3T
Description
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
Table 13. Operating and AC Measurement Conditions
Figure 7. AC Measurement Input Output
Waveform
Note: V
Table 14. Device Capacitance
Note: 1. T
Supply Voltage (V
Input/Output Supply Voltage (V
Ambient Temperature (T
Load Capacitance (C
Clock Rise and Fall Times
Input Rise and Fall Times
Input Pulses Voltages
Input and Output Timing Ref. Voltages
V DDQIN
V DDQ
Symbol
C
2. Sampled only, not 100% tested.
C
OUT
0V
DD
IN
A
= V
= 25°C, f = 1 MHz
DDQ
.
Input Capacitance
Output Capacitance
DD
)
L
)
Parameter
A
)
DDQ
Parameter
)
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
V DDQIN /2
V DDQ /2
AI04153
Test Condition
V
V
OUT
IN
= 0V
= 0V
ment Conditions summarized in Table 13,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Figure 8. AC Measurement Load Circuit
Grade 6
Grade 3
C L includes JIG capacitance
DEVICE
UNDER
TEST
Typ
6
8
Min
–40
–40
2.7
2.4
0 to V
V
1.3V
Value
DDQ
60
DDQ
/2
1N914
3.3k
Max
12
C L
Max
8
125
V
3.6
90
4
4
DD
OUT
Units
AI04154
Unit
pF
pF
°C
°C
pF
ns
ns
V
V
V
V
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