M58BW016BB100T3T STMICROELECTRONICS [STMicroelectronics], M58BW016BB100T3T Datasheet - Page 45

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M58BW016BB100T3T

Manufacturer Part Number
M58BW016BB100T3T
Description
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
PART NUMBERING
Table 24. Ordering Information Scheme
Example:
M58BW016B
T
80
T
3
T
Device Type
M58
Architecture
B = Burst Mode
Operating Voltage
W = V
= 2.7V to 3.6V; V
= V
=2.4 to V
DD
DDQ
DDQIN
DD
Device Function
016B = 16 Mbit (x32), Boot Block, Burst Tuning Protection
016D = 16 Mbit (x32), Boot Block, Burst no Tuning Protection
Array Matrix
T = Top Boot
B = Bottom Boot
Speed
80 = 80ns
90 = 90ns
100 = 100ns
Package
T = PQFP80
ZA = LBGA80: 1.0mm pitch
Temperature Range
3 = –40 to 125 °C
6 = –40 to 85 °C
Option
T = Tape & Reel Packing
Note: Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de-
vice, please contact the ST Sales Office nearest to you.
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