M58BW032BB45T3T STMICROELECTRONICS [STMicroelectronics], M58BW032BB45T3T Datasheet - Page 32

• Manufacturer Part Number: M58BW032BB45T3T
• Description: 32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M58BW032BT, M58BW032BB, M58BW032DT, M58BW032DB
Table 15. DC Characteristics
Note: 1. The Standby mode can be disabled by setting the Standby Disable bit (M14) of the Burst Configuration Register to ‘1’.
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Symbol
I
I
I
I
I
DDB
DD1
DD2
DD3
V
DD
V
V
V
V
I
V
I
LKO
LO
OH
LI
OL
IH
IH
IL
(1)
(1)
(1)
(1)
(1)
Input Leakage Current
Output Leakage Current
Supply Current (Random Read)
Supply Current (Burst Read)
Supply Current (Standby)
Supply Current (Program or Erase)
Supply Current
(Erase/Program Suspend)
Input Low Voltage
Input High Voltage (for DQ lines)
Input High Voltage (for Input only
lines)
Output Low Voltage
Output High Voltage CMOS
V
Program lockout)
DD
Supply Voltage (Erase and
Parameter
E = V
Program, Erase in progress
E = V
E = RP = V
IL
0V V
0V V
Test Condition
, G = V
I
IL
OH
I
OL
, G = V
E = V
75MHz
= –100µA
OUT
= 100µA
IN
IH
DD
, f
IH
IH
V
V
add
DDQ
, f
± 0.2V
DDQ
clock
= 6MHz
=
0.8V
0.8V
V
DDQ
–0.5
Min
DDQIN
DDQIN
–0.1
0.2V
V
DDQ
Max
100
3.6
0.1
2.2
±1
±5
50
50
30
40
DDQIN
+0.3
Unit
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V