M5M5W816WG-10HI MITSUBISHI [Mitsubishi Electric Semiconductor], M5M5W816WG-10HI Datasheet - Page 6

• Manufacturer Part Number: M5M5W816WG-10HI
• Description: 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

1999.1.15
M5M5W816WG -85L, 10L, 85H, 10H
BC1,BC2
Note 3: Hatching indicates the state is "don't care".
Note 4: A Write occurs during S1 low, S2 high overlaps BC1 and/or BC2 low and W low.
Note 5: When the falling edge of W is simultaneously or prior to the falling edge of BC1 and/or BC2 or the falling edge of S1
Note 6: Don't apply inverted phase signal externally when DQ pin is in output mode.
DQ
A
S1
S2
W
0~18
1~16
Write cycle (BC control mode)
or rising edge of S2, the outputs are maintained in the high impedance state.
Ver. 0.1
(Note3)
(Note3)
(Note3)
(Note5)
-85LI, 10LI, 85HI, 10HI
t
su
(A)
MITSUBISHI ELECTRIC
t
su
t
(Note4)
su
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
(BC1) or
(BC2)
t
su
t
(D)
CW
DATA IN
STABLE
t
h
(D)
t
rec
(W)
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
(Note3)
(Note3)
(Note3)
MITSUBISHI LSIs
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