2SA1576A_11 SECOS [SeCoS Halbleitertechnologie GmbH], 2SA1576A_11 Datasheet
2SA1576A_11
Manufacturer Part Number
2SA1576A_11
Description
PNP Silicon Epitaxial Paner Transistors
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
1.2SA1576A_11.pdf
(2 pages)
http://www.SeCoSGmbH.com/
07-Jan-2011 Rev. C
DESCRIPTION
FEATURES
CLASSIFICATION OF h
PACKAGE INFORMATION
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
The 2SA1576A is designed for use in driver stage of
AF amplifier and general purpose amplificaion.
Complements of the 2SC4081
Excellent h
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage temperature
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Product-Rank
Marking
Package
SOT-323
Range
Elektronische Bauelemente
FE
Parameter
Linearity
Parameter
2SA1576A-Q
120~270
(T
FQ
A
MPQ
FE
3K
= 25°C unless otherwise specified)
2SA1576A-R
Symbol
180~390
V
V
V
V
A suffix of “-C” specifies halogen & lead-free
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
h
C
CBO
EBO
f
FR
FE
T
ob
LeaderSize
(T
A
7’ inch
= 25°C unless otherwise specified)
RoHS Compliant Product
Min.
120
-60
-50
-6
Symbol
-
-
-
-
T
2SA1576A-S
V
V
J
V
, T
P
I
CBO
CEO
EBO
C
270~560
C
STG
FS
Typ.
140
4
-
-
-
-
-
-
PNP Silicon Epitaxial Paner Transistors
Max.
150, -55 ~ 150
-0.5
560
0.1
0.1
Ratings
5
-
-
-
-
-150
200
-60
-50
-6
K
F
Unit
MHz
µA
µA
pF
V
V
V
V
1
REF.
2SA1576A
Top View
A
B
C
D
E
F
-0.15A, -60V
Any changes of specification will not be informed individually.
E
A
3
I
I
I
V
V
V
I
V
V
C
C
E
C
L
=-50µA, I
CB
EB
CE
CE
CB
Min.
1.80
1.80
1.15
0.80
1.20
0.20
=-50µA, I
=-1mA, I
=-50mA, I
Base
Millimeter
2
=-6V, I
=-60V, I
=-6V, I
=-12V, I
=-12V, I
1
G
C B
Test Conditions
Max.
SOT-323
2.20
2.45
1.35
1.10
1.40
0.40
C
C
B
D
C
E
=0
=-1mA
=0
E
E
C
B
=0
=0
=0
=0, f=1MHz
=-2mA, f=30MHz
=-5mA
Collector
Emitter
REF.
H
Unit
mW
G
H
K
L
mA
J
2
3
°C
V
V
V
1
Min.
0.08
0.100 REF.
0.525 REF.
0.650 TYP.
-
Millimeter
2
Page 1 of 2
Max.
0.25
-
3
J
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2SA1576A_11 Summary of contents
Page 1
Elektronische Bauelemente DESCRIPTION The 2SA1576A is designed for use in driver stage of AF amplifier and general purpose amplificaion. FEATURES Complements of the 2SC4081 Excellent h Linearity FE CLASSIFICATION 2SA1576A-Q Product-Rank Range 120~270 Marking FQ PACKAGE INFORMATION ...
Page 2
Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 07-Jan-2011 Rev. C 2SA1576A -0.15A, -60V PNP Silicon Epitaxial Paner Transistors Any changes of specification will not be informed individually. Page ...