2SA1577_09 ROHM [Rohm], 2SA1577_09 Datasheet
2SA1577_09
Manufacturer Part Number
2SA1577_09
Description
Medium Power Transistor (-32V, -05A)
Manufacturer
ROHM [Rohm]
Datasheet
1.2SA1577_09.pdf
(3 pages)
Medium Power Transistor (-32V, -05A)
Features
1) Large I
2) Low V
3) Complements the 2SC4097.
Structure
Epitaxial planer type
PNP silicon transistor
Absolute maximum ratings (Ta=25C)
Electrical characteristics (Ta=25C)
Packaging specifications
h
∗
○
c
Type
2SA1577
www.rohm.com
P
FE
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Rmitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
C MAX.
I
2SA1577
2009 ROHM Co., Ltd. All rights reserved.
CMAX.
values are classifies as follows.
Item
h
FE
must not be exceeded.
= -500mA
CE(sat).
Parameter
C
.
Parameter
120 to 270
QR
h
FE
Ideal for low-voltage operation.
Q
Package
Code
Basic ordering unit (pieces)
180 to 390
R
Symbol
V
V
V
Tstg
P
CBO
CEO
EBO
I
Tj
Symbol
C
C
V
BV
BV
BV
Cob
I
I
CE(sat)
CBO
EBO
h
f
CBO
CEO
EBO
FE
T
Taping
Min.
T106
−55 to +150
3000
−40
−32
120
−5
−
−
−
−
−
Limits
−0.5
−40
−32
150
0.2
−5
Typ.
200
−
−
−
−
−
−
−
7
Max.
−0.6
390
−1
−1
−
−
−
−
−
Unit
°C
°C
W
1/2
V
V
V
A
MHz
Unit
μA
μA
pF
V
V
V
V
−
∗
I
I
I
V
V
I
V
V
V
C
C
E
C
= −100μA
CB
EB
CE
CE
CB
= −100μA
= −1mA
/I
B
= −20V
= −4V
= −3V, I
= −5V, I
= −10V, I
= −300mA/−30mA
Dimensions (Unit : mm)
∗
Conditions
2SA1577
C
E
Denotes h
=20mA, f=100MHz
= −100mA
E
=0A, f=1MHz
(1)
0.65 0.65
1.3
(3)
2.0
All terminals have
same dimensions
±
±
ROHM : UMT3
EIAJ : SC-70
(2)
0.1
0.2
0.3
FE
+ 0.1
− 0
Abbreviated symbol: H
0.15
0.2
±
(1) Emitter
(2) Base
(3) Collector
0.05
0.9
0.7
±
0.1
±
0.1
0
∗
2009.12 - Rev.B
∼
0.1
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2SA1577_09 Summary of contents
Page 1
Medium Power Transistor (-32V, -05A) 2SA1577 Features 1) Large -500mA CMAX. 2) Low V Ideal for low-voltage operation. CE(sat). 3) Complements the 2SC4097. Structure Epitaxial planer type PNP silicon transistor Absolute maximum ratings (Ta=25C) Parameter ...
Page 2
100 ° -200 25 °C -100 − 55 °C -50 -20 - -0.5 -0.2 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...