2N5302_06 ONSEMI [ON Semiconductor], 2N5302_06 Datasheet - Page 3

• Manufacturer Part Number: 2N5302_06
• Description: High−Power NPN Silicon Transistor
• Manufacturer: ONSEMI [ON Semiconductor]

100
0.07
0.05
5.0
2.0
1.0
0.5
0.2
0.1
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
50
20
10
0.03
0.07
0.05
0.03
0.02
0.01
1.0
1.0
0.7
0.5
0.3
0.2
0.1
0.02
Figure 5. Active−Region Safe Operating Area
0.05
5302
D = 0.5
2.0 3.0
SINGLE PULSE
V
t
d
0.03 0.05 0.1
CE
0.2
0.1
@ V
0.1 0.2
Secondary Breakdown Limited
Bonding Wire Limited
Thermal Limitations
Pulse Duty Cycle ≤ 10%
T
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
J
= 200°C
OB
I
C
Figure 7. Turn−On Time
= 2.0 V
, COLLECTOR CURRENT (AMP)
0.3
5.0
0.01
0.5
5.0 ms
0.2 0.3
0.02
10
1.0
2N5302
t
t
1.0 ms
T
r
r
0.05
C
@ V
@ V
2.0 3.0
= 25°C
CC
CC
20
0.5
= 30 V
= 10 V
dc
T
I
C
5.0
30
J
100 ms
/I
= 25°C
B
= 10
1.0
10
50
Figure 4. Thermal Response
http://onsemi.com
2.0 3.0
20
100
30
2N5302
t, TIME (ms)
3
5.0
3000
2000
1000
500
300
200
100
q
q
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
3.0
1.0
0.7
0.5
0.3
0.1
JC
JC
J(pk)
0.03
0.5
10
(t) = r(t) q
= 0.875°C/W MAX
− T
0.05
C
= P
Figure 6. Capacitance versus Voltage
20 30
JC
1.0
(pk)
0.1
1
q
JC
V
I
t
C
Figure 8. Turn−Off Time
(t)
0.3
f
R
, COLLECTOR CURRENT (AMP)
2.0
@ V
, REVERSE VOLTAGE (VOLTS)
50
CC
0.5
3.0
= 10 V
C
100
ib
P
(pk)
5.0 7.0
1.0
DUTY CYCLE, D = t
t
200 300
s
t
′
f
t
@ V
3.0
1
t
2
10
CC
5.0
= 30 V
T
J
500
= 25°C
T
I
I
t
B1
C
s
J
′ ≈ t
/I
20
= 25°C
B
= I
1
= 10
/t
s
10
B2
2
− 1/8 t
1000
C
30
ob
f
2000
50
30