MJE13005_06 ONSEMI [ON Semiconductor], MJE13005_06 Datasheet - Page 5

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MJE13005_06

Manufacturer Part Number
MJE13005_06
Description
4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 75 WATTS
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
0.07
0.05
0.03
0.02
0.01
0.7
0.5
0.3
0.2
0.1
1
0.01
DUTY CYCLE ≤ 10%
NOTE
PW and V
R
V
B
CE
I
Adjusted for Desired I
C
t
r
, t
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
f
0.02
≤ 10 ns
D = 0.5
I
C(pk)
CC
0.02
SINGLE PULSE
0.05
0.2
0.1
P
Adjusted for Desired I
W
TIME
5 V
V
V
0.05
t
1
CE
clamp
or
68
B1
t
0.02 mF
t
f
f
0.1
CLAMPED
t
2
0.001 mF
Table 2. Test Conditions for Dynamic Performance
0.01
1N493
1 k
t
f
270
C
UNCLAMPED ≈ t
0.2
3
+5 V
t
OUTPUT WAVEFORMS
Figure 10. Typical Thermal Response [Z
1 k
1 k
2N222
33
1N4933 33
2
2N2905
1/2 W
t
0.5
47
GAP for 200 mH/20 A
L
1N4933
coil
2
http://onsemi.com
= 200 mH
100
1
MJE13005
MJE210
MJE200
t
OBTAIN I
t
t
1
1
2
− V
R
+5 V
ADJUSTED TO
B
BE(off)
I
5
B
L
L
2
t, TIME (ms)
coil
coil
V
T.U.T.
V
clamp
C
CC
(I
(I
C
C
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
pk
pk
qJC(t)
J(pk)
qJC
V
)
)
CC
L
= 1.67°C/W MAX
5
I
− T
C
= r(t) R
C
5.1 k
51
= P
MR826*
V
V
10
CC
clamp
Scope−Tektronics
qJC
475 or Equivalent
(pk)
Test Equipment
*SELECTED FOR ≥ 1 kV
1
= 20 V
V
Z
V
CE
qJC(t)
= 300 Vdc
clamp
20
qJC
(t)]
50
P
(pk)
DUTY CYCLE, D = t
100
t
Duty Cycle = 1.0%
R
for desired I
t
r
R
+10 V
1
, t
V
R
D1 = 1N5820 or Equiv.
R
B
B
CC
D1
C
B
f
SWITCHING
and R
0
t
RESISTIVE
< 10 ns
2
= 62 W
= 22 W
200
−4.0
= 125 V
V
TUT
− 8 V
C
+125 V
adjusted
B
1
and I
25 ms
/t
R
500
2
C
SCOPE
C
1 k

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