DN2470_07 SUTEX [Supertex, Inc], DN2470_07 Datasheet

DN2470_07

Manufacturer Part Number

DN2470_07

Description

N-Channel Depletion-Mode Vertical DMOS FET

Manufacturer

SUTEX [Supertex, Inc]

Datasheet

1.DN2470_07.pdf (3 pages)

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Features

►

Applications

►

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

*Distance of 1.6mm from case for 10 seconds.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage

temperature

Soldering temperature*

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Normally-on switches

Solid state relays

Converters

Linear ampliﬁ ers

Constant current sources

Battery operated systems

Telecom

DSX

700V

/BV

DGX

N-Channel Depletion-Mode Vertical DMOS FET

DS(ON)

42Ω

(max)

-55

C to +150

DSS

300

500mA

Value

±20V

(min)

DGX

DSX

General Description

The DN2470 is a low threshold depletion-mode (normally-on)

transistor utilizing an advanced vertical DMOS structure and

Supertex’s well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefﬁ cient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FET is ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Package Option

Package Options

TO-252 (D-PAK)

DN2470K4-G

TO-252 (D-PAK)

Gate

(top view)

Drain

Source

DN2470

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DN2470_07 Summary of contents

Page 1

N-Channel Depletion-Mode Vertical DMOS FET Features ► High input impedance ► Low input capacitance ► Fast switching speeds ► Low on resistance ► Free from secondary breakdown ► Low input and output leakage Applications ► Normally-on switches ► Solid state ...

Page 2

Thermal Characteristics I Package D (continuous) 1 TO-252 170mA Notes (continuous) is limited by max rated Mounted on FR4 board, 25mm x 25mm x 1.57mm Electrical Characteristics Symbol Parameter BV Drain-to-source breakdown voltage DSX V ...

Page 3

TO-252 D-PAK Package Outline (K4 θ1 H Detail B Side View Gauge Plane L2 θ Notes terminal locations are shown, only 3 are functional. Lead number 2 was removed. Symbol MIN .086 ...

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