LND150N8 SUTEX [Supertex, Inc], LND150N8 Datasheet
LND150N8
Manufacturer Part Number
LND150N8
Description
N-Channel Depletion-Mode MOSFET
Manufacturer
SUTEX [Supertex, Inc]
Datasheet
1.LND150N8.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LND150N8-G
Manufacturer:
TE
Quantity:
12 000
Ordering Information
Features
❏ ESD gate protection
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Excellent thermal stability
❏ Integral source-drain diode
❏ High input impedance and low C
Applications
❏ Solid state relays
❏ Normally-on switches
❏ Converters
❏ Power supply circuits
❏ Constant current sources
❏ Input protection circuits
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
Distance of 1.6 mm from case for 10 seconds.
BV
BV
500V
DSX
DGX
/
R
1.0KΩ
(max)
DS(ON)
ISS
1.0mA
(min)
I
DSS
N-Channel Depletion-Mode
MOSFET
-55°C to +150°C
LND150N3
BV
BV
300°C
TO-92
±20V
DGX
DSX
Order Number / Package
1
Advanced DMOS Technology
The LND1 is a high voltage N-channel depletion mode (normally-
on) transistor utilizing Supertex’s lateral DMOS technology. The
gate is ESD protected.
The LND1 is ideal for high voltage applications in the areas of
normally-on switches, precision constant current sources, volt-
age ramp generation and amplification.
Package Options
TO-243AA*
LND150N8
Note: See Package Outline section for dimensions.
TO-243AA
G
(SOT-89)
LND150ND
S
D
Die
S
Where ❋ = 2-week alpha date code
Product marking for TO-243AA:
LN1E❋
LND150
TO-92
S G D
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LND150N8 Summary of contents
Page 1
... DSS (min) TO-92 TO-243AA* 1.0mA LND150N3 LND150N8 Advanced DMOS Technology The LND1 is a high voltage N-channel depletion mode (normally- on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND1 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, volt- age ramp generation and amplification ...
Page 2
Thermal Characteristics Package I (continuous)* D TO-92 30mA TO-243AA 30mA * I (continuous) is limited by max rated † Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant P Electrical Characteristics Symbol Parameter BV Drain-to-Source ...
Page 3
Typical Performance Curves Output Characteristics 250 V (volts) DS Transconductance vs. Drain Current 400V (milliamps) D Maximum Rated Safe ...
Page 4
Typical Performance Curves BV Variation with Temperature DSS V = -5V GS 1.1 1.0 0.9 - (°C) j Transfer Characteristics 400V (volts) GS Capacitance vs. Drain-to-Source Voltage ...