VP2450N3 SUTEX [Supertex, Inc], VP2450N3 Datasheet

VP2450N3

Manufacturer Part Number

VP2450N3

Description

P-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

SUTEX [Supertex, Inc]

Datasheet

1.VP2450N3.pdf (4 pages)

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Ordering Information

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Features

Applications

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

07/08/02

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Distance of 1.6 mm from case for 10 seconds.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

-500V

DSS

DGS

ISS

and fast switching speeds

(max)

30Ω

DS(ON)

P-Channel Enhancement-Mode

Vertical DMOS FETs

(min)

-0.2A

D(ON)

-55°C to +150°C

300°C

± 20V

DGS

DSS

VP2450N3

TO-92

Order Number / Package

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Options

Product marking for TO-243AA:

Where

Note: See Package Outline section for dimensions.

TO-243AA*

VP2450N8

= 2-week alpha date code

VP4E

TO-92

S G D

VP2450ND

Die

TO-243AA

(SOT-89)

VP2450

Related parts for VP2450N3

VP2450N3 Summary of contents

Page 1

... Vertical DMOS FETs Order Number / Package I D(ON) (min) TO-92 TO-243AA* -0.2A VP2450N3 VP2450N8 Product marking for TO-243AA: Where Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in MOS devices ...

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VP2450N3 SUTEX [Supertex, Inc], VP2450N3 Datasheet

VP2450N3

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VP2450N3 Summary of contents

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