NTE21 NTE [NTE Electronics], NTE21 Datasheet
NTE21
Manufacturer Part Number
NTE21
Description
Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output
Manufacturer
NTE [NTE Electronics]
Datasheet
1.NTE21.pdf
(2 pages)
Features:
D High Power in a Compact ATR Package: P
Applications:
D Regulated Power Supplies
D 1 to 2W Output Stages
D Drivers
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation, P
Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Transition Frequency
Output Capacitance
Continuous
Pulse
NTE20
NTE21
Parameter
High Power, Low Collector Saturation Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Silicon Complementary Transistors
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
CEO
NTE20 (NPN) & NTE21 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
= +25 C unless otherwise specified)
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
I
C
CBO
h
EBO
f
FE
T
ob
Power Output
I
I
I
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
CB
= 50 A
= 1mA
= 50 A
= 2A, I
O
= 4V
= 20V
= 3V, I
= 5V, I
= 10V, f = 1MHz
= 1W
Test Conditions
C
C
C
= 200mA
= 500mA
= 500mA
Min
120
32
40
5
–
–
–
–
–
Typ
500
100
50
–
–
–
–
–
–
–55 to +135 C
Max
270
–
–
–
1
1
–
–
–
+135 C
Unit
MHz
mV
2.5A
3.0A
pF
V
V
V
40V
32V
A
A
1W
5V
2A
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NTE21 Summary of contents
Page 1
... Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Saturation Voltage Transition Frequency Output Capacitance NTE20 (NPN) & NTE21 (PNP) Power Output = +25 C unless otherwise specified ...
Page 2
E C .100 (2.54) .051 (1.29) .185 (4.7) B .138 (3.5) .022 (0.55) ...