HD6433044 Hitachi Semiconductor, HD6433044 Datasheet - Page 602

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HD6433044

Manufacturer Part Number
HD6433044
Description
(HD64 Series) Hitachi Single-Chip Microcomputer
Manufacturer
Hitachi Semiconductor
Datasheet

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PVNG:
PVOK:
NGEND:
18.7.4 Erase Mode
To erase the flash memory, follow the erasing algorithm shown in figure 18-16. This erasing
algorithm can erase data without subjecting the device to voltage stress or impairing the reliability
of programmed data.
To erase flash memory, before starting to erase, first place all memory data in all blocks to be
erased in the programmed state (program all memory data to H'00). If all memory data is not in
the programmed state, follow the sequence described later to program the memory data to zero.
To select the flash memory areas to be erased, first set the V
register (FLMCR), wait 5 to 10 µs, and set up erase block registers 1 and 2 (EBR1 and EBR2).
Next set the E bit in FLMCR, selecting erase mode. The erase time is the time during which the
E bit is set. To prevent overerasing, use a software timer to divide the erase time. Overerasing,
due to program runaway for example, can give memory cells a negative threshold voltage and
cause them to operate incorrectly. Before selecting erase mode, set up the watchdog timer so as to
prevent overerasing.
. . . . . . . . . . . . . . . . . .
CMP.B
BEQ
MOV.B
MOV.B
CMP.B
BEQ
INC.B
SHLL.W
BRA
MOV.W
MOV.B
MOV.B
MOV.B
MOV.W
MOV.B
MOV.B
Programming error
R3H,
PVOK
#40,
R5H,
#06,
NGEND
R0L
E4
PRGMS
#4000,
R5H,
R5L,
R5L,
#4000,
R5L,
R5L,
R5H
@FLMCR:8 ;
R0L
R5
@FLMCR:8 ;
@EBR*:8
@FLMCR:8 ;
R5
@EBR*:8
@FLMCR:8 ;
R1H
593
;
;
;
;
;
;
;
;
;
;
;
;
Clear EBR*
Clear V
Clear EBR*
Clear V
Compare programmed data with read data
Program-verify decision
Clear PV bit
Program-verify executed 6 times?
If program-verify executed 6 times, branch
to NGEND
Program-verify fail count + 1
Double program loop counter value
Program again
Clear PV bit
PP
One byte programmed
PP
PP
E bit in the flash memory control
E bit
E bit
R0L

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