CY62128V Cypress Semiconductor, CY62128V Datasheet - Page 3
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CY62128V
Manufacturer Part Number
CY62128V
Description
128K x 8 Static RAM
Manufacturer
Cypress Semiconductor
Datasheet
1.CY62128V.pdf
(12 pages)
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Electrical Characteristics
Electrical Characteristics
Capacitance
I
V
V
V
V
I
I
I
I
I
C
C
Note:
Parameter
Parameter
SB2
IX
OZ
CC
SB1
SB2
3.
OH
OL
IH
IL
IN
OUT
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Automatic CE
Power-Down Current—
CMOS Inputs
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage Current
V
Current
Automatic CE
Power-Down Current—
TTL Inputs
Automatic CE
Power-Down Current—
CMOS Inputs
CC
[3]
Operating Supply
Description
Description
Input Capacitance
Output Capacitance
Over the Operating Range
Over the Operating Range
Description
V
V
GND < V
GND < V
Disabled
V
I
f = f
Max. V
V
V
Max. V
CE > V
V
or V
Indust’l Temp Range
OUT
CC
CC
CC
IN
IN
IN
Max. V
CE > V
V
or V
IN
MAX
> V
< V
> V
IN
= Min., I
= Min., I
= Max.,
= 0 mA,
Test Conditions
> V
IN
< 0.3V, f = 0
CC
CC
CC
IH
IL
CC
< 0.3V, f = 0
= 1/t
CC
CC
, f = f
CC
I
O
, CE > V
,
or
< V
– 0.3V
– 0.3V
< V
,
– 0.3V
– 0.3V
OH
OL
RC
Test Conditions
CC
MAX
CC
= 0.1 mA
= –0.1 mA
T
V
, Output
A
CC
IH
= 25°C, f = 1 MHz,
,
= 3.0V
3
Test Conditions
L
LL
L
LL
L
LL
LL
Com’l
Ind’l
Min.
–0.5
2.4
–1
–1
2
CY62128V25-100
L
LL
XL
L
LL
Typ.
0.4
±1
±1
15
15
[2]
Min.
Max.
+0.5
V
300
0.4
0.8
+1
+1
20
50
12
24
CC
CY62128V-55/70
Min.
V
V
–0.5
Typ.
0.8*
0.7*
–1
–1
Max.
CC
CC
CY62128V Family
0.4
CY62128V18-200
6
8
[2]
Typ.
±0.1
±0.1
0.4
10
5
Max.
100
100
[2]
15
10
30
Max.
+0.3
V
0.3*
V
100
0.2
+1
+1
15
30
10
20
CC
CC
Unit
pF
pF
Unit
A
A
A
A
A
Unit
mA
V
V
V
V
A
A
A
A
A
A