M36DR432BD ST Microelectronics, M36DR432BD Datasheet - Page 50

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M36DR432BD

Manufacturer Part Number
M36DR432BD
Description
32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256Kb x16 SRAM / Multiple Memory Product
Manufacturer
ST Microelectronics
Datasheet
M36DR432AD, M36DR432BD
Table 35. Device Geometry Definition
50/52
M36DR432AD M36DR432AD Erase Block Region Information
M36DR432AD M36DR432AD
Offset Word
Mode
2Ah
2Bh
2Ch
2Dh
2Eh
2Dh
2Eh
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
2Fh
30h
31h
32h
33h
34h
0002h
003Eh
0000h
0000h
0007h
003Eh
0016h
0001h
0000h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0000h
0020h
0000h
0000h
0000h
0001h
Data
Device Size = 2
Flash Device Interface Code description: Asynchronous x16
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within device
bit 7 to 0 = x = number of Erase Block Regions
Note:1. x = 0 means no erase blocking, i.e. the device erases at once in "bulk."
bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes
in size. The value z = 0 is used for 128 byte block size.
e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K
bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase
Block Region:
e.g.
Note: y = 0 value must be used with number of block regions of one as indicated
2. x specifies the number of regions within the device containing one or more
3. By definition, symmetrically block devices have only one blocking region.
y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]
y = 0 means no blocking (# blocks = y+1 = "1 block")
by (x) = 0
contiguous Erase Blocks of the same size. For example, a 128KB device
(1Mb) having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is
considered to have 5 Erase Block Regions. Even though two regions both
contain 16KB blocks, the fact that they are not contiguous means they are
separate Erase Block Regions.
n
in number of bytes
Description
n

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