IRFR9024N IRF, IRFR9024N Datasheet

no-image

IRFR9024N

Manufacturer Part Number
IRFR9024N
Description
Power MOSFET
Manufacturer
IRF
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR9024N
Manufacturer:
IR
Quantity:
2 020
Part Number:
IRFR9024N
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFR9024N
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFR9024NCPBF
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFR9024NPBF
Manufacturer:
IR
Quantity:
60 000
Part Number:
IRFR9024NPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFR9024NPBF
Quantity:
1 600
Part Number:
IRFR9024NTR
Manufacturer:
ST
0
Part Number:
IRFR9024NTR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFR9024NTRPBF
Manufacturer:
IR
Quantity:
30 000
Part Number:
IRFR9024NTRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFR9024NTRPBF
0
Company:
Part Number:
IRFR9024NTRPBF
Quantity:
30 000
Company:
Part Number:
IRFR9024NTRPBF
Quantity:
80 000
Company:
Part Number:
IRFR9024NTRPBF
Quantity:
80 000
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
AR
D
D
DM
AS
AR
J
STG
D
GS
@ T
@ T
JC
JA
JA
Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9024N)
Straight Lead (IRFU9024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
Parameter
Parameter
PRELIMINARY
GS
GS
@ -10V
@ -10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
IRFR/U9024N
HEXFET
T O -2 52 A A
D -P a k
-55 to + 150
S
D
Max.
0.30
-6.6
± 20
-11
-44
-10
3.8
38
62
-8
®
R
TO -2 5 1 A A
Power MOSFET
I-P a k
DS(on)
Max.
V
110
3.3
50
DSS
I
D
= -11A
PD - 9.1506
= 0.175
= -55V
Units
Units
°C/W
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
6/26/97

Related parts for IRFR9024N

IRFR9024N Summary of contents

Page 1

... Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ...

Page 2

... Intrinsic turn-on time is negligible (turn-on is dominated by L Pulse width This is applied for I-PAK, L lead and center of die contact Uses IRF9Z24N data and test conditions (BR)DSS Conditions ––– 0V -250µ ...

Page 3

... V 20µs PULSE WIDTH 0 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics ° 10 100 ° 150 -25V IRFR/U9024N 100 VGS TOP -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 10 -4.5V 1 20µs PULSE WIDTH T = 150 C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 2 ...

Page 4

... IRFR/U9024N Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° ...

Page 5

... SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.1 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 125 150 ° 0.001 t , Rectangular Pulse Duration (sec) 1 IRFR/U9024N D.U. -10V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit d(on ...

Page 6

... IRFR/U9024N 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 120 - 100 ...

Page 7

... Fig 14. For P-Channel HEXFETS + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Forward Drop 5% IRFR/U9024N + + *** V =10V ...

Page 8

... IRFR/U9024N Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 1.14 (.045) 2X 0.76 (.030) 2.28 (.090) Part Marking Information TO-252AA (D-Pak 120 LOT ...

Page 9

... 0.58 (.023) 0.46 (.018 IRFR/U9024N 2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) LEAD AS SIG NMENT DRA IN 6.45 (.245 OURCE 5.68 (.224 DRA IN NOT DIME NSIO NING & T OLE RANCING NSI Y14.5M, 1982. ...

Page 10

... IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com . . ...

Related keywords