WS57C256F-1 STMicroelectronics, WS57C256F-1 Datasheet
WS57C256F-1
Manufacturer Part Number
WS57C256F-1
Description
MILITARY HIGH SPEED 32K x 8 CMOS EPROM
Manufacturer
STMicroelectronics
Datasheet
1.WS57C256F-1.pdf
(2 pages)
•
•
•
The WS57C256F is a High Performance 256K UV Erasable Electrically Programmable Read Only Memory. It is
manufactured using an advanced CMOS process technology enabling it to operate at speeds as fast as 55 ns
Access Time.
Two major features of the WS57C256F are its Low Power and High Speed. While operating in a TTL environment it
consumes less than 120 mA while cycling at full speed. Additionally, the WS57C256F can be placed in a standby
mode which drops operating current below 5 mA in a TTL environment and 500 µA in a CMOS environment.
The WS57C256F also has exceptional output drive capability. It can source 4 mA and sink 16 mA per output.
The WS57C256F is configured in the standard EPROM pinout which provides an easy upgrade path for systems
which are currently using standard EPROMs.
MODE SELECTION
PRODUCT SELECTION GUIDE
NOTES:
1. X can be V
2. V
3. A1 – A8, A10 – A14 = V
MODE
Read
Output
Disable
Standby
Program
Program
Verify
Program
Inhibit
Signature
Fast Access Time
— 55 ns
Low Power Consumption
DESC SMD No. 5962-86063
IH
Address Access Time (Max)
Output Enable Time (Max)
= V
PINS CE/
PP
3
Return to Main Menu
= 12.75 ± 0.25 V.
IL
PGM
V IH
V IH
V IL
V IL
V IL
V IL
MILITARY HIGH SPEED 32K x 8 CMOS EPROM
X
X
or V
PARAMETER
IH
V IH
V IH
V IL
V IH
V IL
V IL V H
V IL V H
OE
.
X
IL
A 9
.
X
X
X
X
X
X
2
2
V IH V CC V CC
V IL V CC V CC
A 0
X
X
X
X
X
X
4. Manufacturer Signature.
5. Device Signature.
V PP
V PP
V PP
V CC V CC
V CC V CC
V CC V CC
V PP V CC OUTPUTS
2
2
2
V CC
V CC
V CC
GENERAL DESCRIPTION
High Z
High Z
High Z
EO H
D OUT
D OUT
23 H
D IN
KEY FEATURES
4
5
PIN CONFIGURATION
NC
O
A
A
A
A
A
A
A
WS57C256F-55
6
5
4
3
2
1
0
0
•
•
5
6
7
8
9
10
11
12
13
55 ns
25 ns
O
14 15 16 17 18 19 20
EPI Processing
— Latch-up Immunity Up to 200 mA
Standard EPROM Pinout
4 3 2
1
O
Chip Carrier
2
NC O
1
32 31 30
3
O
4
O
29
28
27
26
25
24
23
22
21
5
TOP VIEW
A
A
A
NC
OE
A
CE/PGM
O
O
8
9
11
10
7
6
GND
WS57C256F-70
V
A
WS57C256F
O
O
O
PP
A
A
A
A
A
A
A
A
12
7
6
5
4
3
2
1
0
0
1
2
70 ns
30 ns
1
2
3
4
5
6
7
8
9
10
11
12
13
14
CERDIP
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
A 14
A 13
A 8
A 9
A 11
OE
A 10
CE/PGM
O
O
O
O
O
CC
7
6
5
4
3
4-17
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WS57C256F-1 Summary of contents
Page 1
... CMOS process technology enabling it to operate at speeds as fast Access Time. Two major features of the WS57C256F are its Low Power and High Speed. While operating in a TTL environment it consumes less than 120 mA while cycling at full speed. Additionally, the WS57C256F can be placed in a standby mode which drops operating current below TTL environment and 500 µ ...
Page 2
... NOTES: The actual part marking will not include the initials "WS." * SMD product. See page 4-1 for DESC SMD number. PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS The WS57C256F is programmed using Algorithm D shown on page 5-9. For complete data sheet and electrical specifications see page 3-13. Return to Main Menu PACKAGE ...