TSD2931-10 STMicroelectronics, TSD2931-10 Datasheet

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TSD2931-10

Manufacturer Part Number
TSD2931-10
Description
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
Manufacturer
STMicroelectronics
Datasheet

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DESCRIPTION
The SD2931-10 is a gold metallized N-Channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931
MOSFET, it is intended for use in 50V dc large
signal applications up to 230 MHz.
The SD2931-10 is mechanical compatible to the
SD2931 but offers in addition a better thermal
capability (25 % lower thermal resistance),
representing the best-in-class transistors for ISM
applications.
ABSOLUTE MAXIMUM RATINGS (T
THERMAL DATA
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
March 2000
Symbol
V
GOLD METALLIZATION
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 150W MIN. WITH 14 dB gain @175
MHz
THERMALLY ENHANCED PACKAGING FOR
LOWER JUNCTION TEMPERATURES
R
(BR)DSS
P
R
V
T
V
th(c -s)
DGR
DI SS
th (j-c)
I
STG
T
GS
D
j
Drain Source Voltage
Drain-Gate Voltage (R
Gate-Source Voltage
Drain Current
Power Dissipation
Max. O perating Junction Temperature
Storage Temperature
Junction-Case Thermal Resistance
Case-Heatsink Thermal Resistance
Parameter
GS
HF/VHF/UHF N-CHANNEL MOSFETs
= 1M )
case
= 25
o
C)
RF POWER TRANSISTORS
ORDER CODE
SD2931-10
2. Source
1. Drain
PIN CONNECTION
-65 to 150
epoxy sealed
Value
125
125
389
200
20
20
M174
0.45
0.2
SD2931-10
4. Source
3.Gate
TSD2931-10
BRANDING
ADVANCE DATA
o
o
Uni t
C/W
C/W
o
o
W
V
V
V
A
C
C
1/10

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TSD2931-10 Summary of contents

Page 1

... Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). March 2000 RF POWER TRANSISTORS epoxy sealed ORDER CODE SD2931-10 PIN CONNECTION 1. Drain 2. Source case -65 to 150 SD2931-10 ADVANCE DATA M174 BRANDING TSD2931-10 3.Gate 4. Source Value Uni t 125 V 125 389 W o 200 C ...

Page 2

SD2931-10 ELECTRICAL SPECIFICATION (T STATIC Symb (BR)DSS DSS 20V GSS GS V VDS = 10V GS( 10V DS( ON ...

Page 3

TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage 10000 1000 Ciss Coss 100 Crss VDS, DRAIN-SOURCE VOLTAGE (V) Gate-Source Voltages vs Case Temperature 1.1 Id =9A Id =10A 1.05 Id =11A 1 0.95 0.9 Id =.25A 0.85 ...

Page 4

SD2931-10 TYPICAL PERFORMANCE (175 MHz) Output Power vs Input Power 250 200 150 100 50 f=175Mhz Idq=250mA Pin, INPUT POWER(W) Power Gain vs Output Power Vdd=50V Idq=250mA 11 f=175Mhz 10 0 ...

Page 5

MHz Test Circuit Schematic (Production Test Circuit Note : All dimensions in inches 175 MHz Test Circuit Component Part List T1 4:1 Transformer, 25 ohm Flexible Coax .090 OD 6 ” Long T2 1:4 Transformer, 25 ohm ...

Page 6

SD2931-10 175 MHz Test Circuit Photomaster 175 MHz Test Circuit 6/10 ...

Page 7

TYPICAL PERFORMANCE (30 MHz) Output Power vs Input Power 250 Vdd = 50V 200 150 100 MHz IDQ = 250 0.01 0.06 0.11 0.16 0.21 0.25 0.3013 0.35 Pin, INPUT POWER (W) Efficency vs ...

Page 8

SD2931-10 30 MHz Test Circuit Schematic (Engineering Test Circuit MHz Test Circuit Component Part List T1 9:1 Transformer, 25 ohm Flexible Coax with extra shield .090 OD 15” Long T2 1:4 Transformer, 50 ohm Flexible Coax .225 OD ...

Page 9

M174 (.500 DIA 4L N/HERM W/FLG) MECHANICAL DATA mm DIM. MIN. TYP. A 5.56 B 3.18 C 6.22 D 18.28 E 3.18 F 24.64 G 12.57 H 0.08 I 2. 25.53 M 3.05 Controlli n g ...

Page 10

... STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – ...

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