MG150J2YS40 TOSHIBA Semiconductor CORPORATION, MG150J2YS40 Datasheet

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MG150J2YS40

Manufacturer Part Number
MG150J2YS40
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High Power Switching Applications
Motor Control Applications
l The electrodes are isolated from case
l High input impedance
l Includes a complete half bridge in one package
l Enhancement-mode
l High speed
l Low saturation voltage : V
Equivalent Circuit
Maximum Ratings
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
Collector-emitter voltage
Gate-emitter voltage
Collector current
Forward current
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Characteristic
(Ta = 25°C)
: t
DC
1ms
DC
1ms
t
f
rr
CE (sat)
= 0.30µs (Max) (I
TOSHIBA GTR Module Silicon N Channel IGBT
= 0.15µs (Max) (I
MG150J2YS50
= 2.70V (Max) (I
Symbol
V
V
V
T
I
I
P
CES
GES
CP
FM
I
I
T
Isol
stg
C
F
C
j
C
F
http://store.iiic.cc/
= 150A)
= 150A)
C
(AC 1 min.)
= 150A)
−40 ~ 125
Rating
2500
3 / 3
600
±20
150
300
150
300
780
150
JEDEC
EIAJ
TOSHIBA
Unit
N·m
°C
°C
W
V
V
A
A
V
MG150J2YS50
2001-02-22 1/5
2-95A1A
Unit: mm
000707EAA2

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