K6R4008V1D-JC08 Samsung, K6R4008V1D-JC08 Datasheet

K6R4008V1D-JC08

Manufacturer Part Number

K6R4008V1D-JC08

Description

Manufacturer

Samsung

Datasheets

1.K6R4004C1D-KC10.pdf (12 pages)

2.K6R4008V1D-TC10.pdf (10 pages)

Specifications of K6R4008V1D-JC08

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K6R4008V1D

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Document Title

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

512Kx8 Bit High Speed Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Rev No.

Rev. 0.0

Rev. 0.1

Rev. 0.2

Rev. 0.3

Rev. 1.0

History

Initial release with Preliminary.

Add Low Ver.

Change Icc, Isb and Isb1

1. Correct AC parameters : Read & Write Cycle mA

2. Delete Low Ver.

3. Delete Data Retention Characteristics

1. Delete 12ns,15ns speed bin.

2. Change Icc for Industrial mode.

CC(Commercial)

CC(Industrial)

SB1(L-ver.)

Item

10ns

12ns

15ns

10ns

12ns

15ns

10ns

8ns

110mA

130mA

115mA

100mA

0.5mA

90mA

80mA

70mA

85mA

30mA

85mA

- 1 -

Current

100mA

1.2mA

80mA

65mA

55mA

45mA

85mA

75mA

65mA

20mA

90mA

75mA

Aug. 20. 2001

Sep. 19. 2001

Nov. 3. 2001

Nov.23. 2001

Dec.18. 2001

Draft Data

CMOS SRAM

PRELIMINARY

December 2001

Preliminary

Final

Remark

Rev 1.0

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