MRF19045S Motorola, MRF19045S Datasheet

MRF19045S

Manufacturer Part Number

MRF19045S

Description

Manufacturer

Motorola

Datasheet

1.MRF19045S.pdf (12 pages)

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

• Typical CDMA Performance @ 1960 MHz, 26 Volts, I

• 100% Tested Under 2 - Carrier N - CDMA

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ESD PROTECTION CHARACTERISTICS

Rev. 6

(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .

Motorola, Inc. 2004

MOTOROLA RF DEVICE DATA

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Thermal Resistance, Junction to Case

Human Body Model

Machine Model

Designed for PCN and PCS base station applications with frequencies from

Multi - carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power

Derate above 25°C

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Output Power — 9.5 Watts Avg.

Power Gain — 14.9 dB

Efficiency — 23.5%

Adjacent Channel Power —

IM3 — - 37 dBc

885 kHz: - 50 dBc @ 30 kHz BW

= 25°C

Test Conditions

Freescale Semiconductor, Inc.

Characteristic

For More Information On This Product,

Rating

Go to: www.freescale.com

= 550 mA

Symbol

DSS

θJC

stg

MRF19045LSR3

MRF19045LR3

MRF19045LR3 MRF19045LSR3

LATERAL N - CHANNEL

CASE 465E - 04, STYLE 1

CASE 465F - 04, STYLE 1

RF POWER MOSFETs

1990 MHz, 45 W, 26 V

M3 (Minimum)

2 (Minimum)

MRF19045LSR3

- 65 to +150

MRF19045LR3

Value (1)

- 0.5, +15

Class

Value

0.60

1.65

NI - 400S

105

200

NI - 400

Order this document

by MRF19045/D

Watts

W/°C

°C/W

Unit

Vdc

°C

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