AT28BV64B25TI ATMEL Corporation, AT28BV64B25TI Datasheet

no-image

AT28BV64B25TI

Manufacturer Part Number
AT28BV64B25TI
Description
SOP
Manufacturer
ATMEL Corporation
Datasheet

Specifications of AT28BV64B25TI

Date_code
04+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT28BV64B25TI
Manufacturer:
NSC
Quantity:
5 009
Features
1. Description
The AT28BV64B is a high-performance electrically erasable programmable read only-
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW. When the device is
deselected, the CMOS standby current is less than 20 µA.
The AT28BV64B is accessed like a static RAM for the read or write cycle without the
need for external components. The device contains a 64 byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28BV64B has additional features to ensure high quality and manufactura-
bility. A software data protection mechanism guards against inadvertent writes. The
device also includes an extra 64 bytes of EEPROM for device identification or
tracking.
Single 2.7V to 3.6V Supply
Hardware and Software Data Protection
Low Power Dissipation
Fast Read Access Time – 200 ns
Automatic Page Write Operation
Fast Write Cycle Times
DATA Polling for End of Write Detection
High-reliability CMOS Technology
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
– 15 mA Active Current
– 20 µA CMOS Standby Current
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
– Page Write Cycle Time: 10 ms Maximum
– 1 to 64 Byte Page Write Operation
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
64K (8K x 8)
Battery-Voltage
Parallel
EEPROM
with Page Write
and Software
Data Protection
AT28BV64B
0299H–PEEPR–10/06

Related parts for AT28BV64B25TI

Related keywords