IAM81008 Agilent Technologies, Inc., IAM81008 Datasheet

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IAM81008

Manufacturer Part Number

IAM81008

Description

SOP8

Manufacturer

Agilent Technologies, Inc.

Datasheet

1.IAM81008.pdf (4 pages)

Specifications of IAM81008

Date_code

09+

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Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IAM81008-STR

Manufacturer:

NEC

Quantity:

6 219

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IAM81008-TR1

Manufacturer:

AGILENT

Quantity:

20 000

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Silicon Bipolar MMIC 5 GHz

Active Double Balanced

Mixer/IF Amp

Technical Data

Features

• RF-IF Conversion Gain

• IF Conversion Gain From

• Low Power Dissipation:

• Single Polarity Bias Supply:

• Load-insensitive Performance

• Conversion Gain Flat Over

• Low LO Power Requirements:

• Low Cost Plastic Surface

Description

The IAM-81008 is a complete low

power consumption, double

balanced active mixer housed in a

miniature low cost plastic surface

mount package. It is designed for

narrow or wide bandwidth commer-

cial and industrial applications

having RF inputs up to 5 GHz.

Operation at RF and LO frequencies

less than 50 MHz can be achieved

using optional external capacitors

to ground. The IAM-81008 is

particularly well suited for applica-

tions that require load-insensitive

conversion and good spurious

signal suppression with minimum

LO and bias power consumption.

From 0.05– 5 GHz

DC to 1 GHz

65 mW at V

V

Temperature

–5 dBm Typical

Mount Package

CC

= 4 to 8 V

CC

= 5 V Typical

V

Typical applications include

frequency down conversion,

modulation, demodulation and

phase detection. Markets include

fiber-optics, GPS satelite navigation,

mobile radio, and battery powered

communications receivers.

The IAM series of Gilbert multiplier-

based frequency converters is

fabricated using HP’s 10 GHz, f

25 GHz f

bipolar process. This process uses

nitride self alignment,

submicrometer lithography, trench

isolation, ion implantation, gold

metallization and polyimide inter-

metal dielectric and scratch protec-

tion to achieve excellent perfor-

mance, uniformity and reliability.

Typical Biasing Configuration and

Functional Block Diagram

Note: No external baluns are required.

ee

IF Output

= 0 V

RF Input

MAX

ISOSAT™-I silicon

C

C

7-119

block

block

1

2

3

4

T

,

IAM-81008

Plastic SO-8 Package

Pin Configuration

GROUND AND

THERMAL

CONTACT

V

GROUND

RF

C

8

7

6

5

C

CC1

IN

block

block

1

2

3

4

Optional Low

Frequencies

RF Ground

Optional Low

LO Ground

V

LO Input

CC

= 5 V

8

7

6

5

5965-9107E

GROUND AND

THERMAL

CONTACT

RF

POWER CONTROL

OUT

AND V

CC2

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