SHF0289 Sirenza Microdevices, SHF0289 Datasheet

SHF0289

Manufacturer Part Number

SHF0289

Description

SOT-89

Manufacturer

Sirenza Microdevices

Datasheet

1.SHF0289.pdf (4 pages)

Specifications of SHF0289

Date_code

05+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SHF0289Z

Manufacturer:

SIRENZA

Quantity:

20 000

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Product Description

Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs

Heterostructure FET (HFET) housed in a low-cost surface-mount plastic

package. The HFET technology improves breakdown voltage while minimizing

Schottky leakage current resulting in higher PAE and improved linearity.

Output power at 1dB compression for the SHF-0289 is +30dBm when

biased for Class AB operation at 7V,200mA. The +43 dBm third order

intercept makes it ideal for high dynamic range, high intercept point

requirements. It is well suited for use in both analog and digital wireless

communication infrastructure and subscriber equipment including 3G,

cellular, PCS, fixed wireless, and pager systems.

The matte tin finish on Sirenza’s lead-free package utilizes a post anneal-

ing process to mitigate tin whisker formation and is RoHS compliant per EU

Directive 2002/95. This package is also manufactured with green molding

compounds that contain no antimony trioxide nor halogenated fire retar-

dants.

[1] 100% tested - Insertion gain tested using a 50 ohm contact board (no matching circuitry) during final production test.

[2] Sample tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statistical data from sample test measurements. The test fixture is an engineering application circuit board.

The application circuit was designed for the optimum combination of linearity, P1dB, and VSWR.

[3] Maximum recommended power dissipation is specified to maintain T

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.

Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent

rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or

303 S. Technology Court, Broomfield, CO 80021

S y m b o l

G m a x

P 1 d B

B V

G a i n

O IP 3

R t h

N F

D S S

C H A N

D Q

D IS S

D S

2 1

G S

G D

D e v i c e C h a r a c t e r i s t i c s

M a x i m u m A v a i la b le G a i n

In s e r t i o n G a i n

P o w e r G a i n

O u t p u t T h i r d O r d e r In t e r c e p t P o i n t

O u t p u t 1 d B C o m p r e s s i o n P o i n t

IS - 9 5 C h a n n e l P o w e r ( - 4 5 d B c A C P R )

N o i s e F i g u r e

S a t u r a t e d D r a i n C u r r e n t

P i n c h - O f f V o lt a g e

G a t e - S o u r c e B r e a k d o w n V o lt a g e

G a t e - D r a i n B r e a k d o w n V o lt a g e

O p e r a t i n g V o lt a g e

O p e r a t i n g C u r r e n t

P o w e r D i s s i p a t i o n

T r a n c o n d u c t a n c e

T h e r m a l R e s i s t a n c e

Typical Gain Performance (7V,200mA)

Frequency (GHz)

[ 2 ]

[1 ]

Gain

[1 ]

[ 3 ]

[3 ]

[ 3 ]

Gmax

<140C at T

[ 2 ]

[1 ]

[ 2 ]

=85C. V

( u n l e s s o t h e r w i s e n o t e d )

A p p li c a t i o n C i r c u i t

d r a i n - s o u r c e

d r a i n - s o u r c e , q u i e s c e n t

T e s t C o n d i t i o n s , 2 5 C

ju n c t i o n - t o - le a d

G S

G D

D S

= Z

= 2 . 4 m A , d r a i n o p e n

= 2 . 4 m A , V

= V

= 2 . 0 V , I

= 7 V , I

Phone: (800) SMI-MM

* I

= 5 0 O h m s

* , Z

< 1.4W is recommended for continuous reliable operation.

D S P

D Q

, V

= Z

SHF-0289

SHF-0289Z

0.05 - 6 GHz, 1.0 Watt

GaAs HFET

Product Features

• Now available in Lead Free, RoHS

• High Linearity Performance at 1.96 GHz

• +21.7 dBm W-CDMA Channel Power

• High Drain Efficiency (>50% at P1dB)

• See App Note AN-032 for circuit details

Applications

• Analog and Digital Wireless Systems

• 3G, Cellular, PCS

• Fixed Wireless, Pager Systems

= 2 0 0 m A

D S

G S

= 1 . 2 m A

Compliant, & Green Packaging

G S

+30 dBm P1dB

+43 dBm OIP3

+23.7 dBm IS-95 Channel Power

+14.6 dB Gain

= 0 V

= - 0 . 2 5 V

= - 5 . 0 V

F r e q u e n c y

0 . 9 0 G H z

1 . 9 6 G H z

2 . 1 4 G H z

0 . 9 0 G H z

1 . 9 6 G H z

T e s t

U n i t s

RoHS Compliant

d B m

C / W

m A

m S

m A

d B

Green

Package

4 0 . 5

2 8 . 7

1 6 . 7

M i n

1 3 . 1

4 0 8

2 8 8

- 3 . 0

4 3 . 0

3 0 . 2

2 3 . 7

T y p

1 9 . 5

1 8 . 5

1 4 . 6

5 8 8

3 9 6

- 1 . 9

4 . 0

- 1 7

- 2 2

2 3

2 0

4 1

http://www.sirenza.com

EDS-101241 Rev E

M a x

2 0 . 3

1 6 . 1

7 6 8

5 0 4

- 1 . 0

2 8 0

- 1 5

- 1 7

8 . 0

1 . 4

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