SUM110P0607LE3 Vishay Semiconductors, SUM110P0607LE3 Datasheet

SUM110P0607LE3

Manufacturer Part Number

SUM110P0607LE3

Description

TO263

Manufacturer

Vishay Semiconductors

Datasheet

1.SUM110P0607LE3.pdf (6 pages)

Specifications of SUM110P0607LE3

Date_code

08+

Current page: 1 of 6
Download datasheet (94Kb)

Notes:

a. Duty cycle ≤ 1 %.

b. When Mounted on 1" square PCB (FR-4 material).

c. See SOA curve for voltage derating.

d. Limited by package.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72439

S-80274-Rev. C, 11-Feb-08

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Avalanche Current

Single Pulse Avalanche Energy

Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient

Junction-to-Case

= 175 °C)

- 60

(V)

Ordering Information: SUM110P06-07L

Top View

TO-263

0.0088 at V

0.0069 at V

DS(on)

SUM110P06-07L-E3 (Lead (Pb)-free)

P-Channel 60-V (D-S) 175 °C MOSFET

(Ω)

= - 4.5 V

= - 10 V

= 25 °C, unless otherwise noted

- 110

(A)

PCB Mount

L = 0.1 mH

= 125 °C

= 25 °C

FEATURES

• TrenchFET

• Package with Low Thermal Resistance

P-Channel MOSFET

Symbol

, T

thJA

thJC

stg

Power MOSFET

- 55 to 175

SUM110P06-07L

Typical

Limit

- 110

- 240

375

± 20

3.75

- 60

- 95

- 75

281

0.4

Vishay Siliconix

www.vishay.com

°C/W

Unit

RoHS*

COMPLIANT

°C

Available

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