AT1511R Aimtron Technology, AT1511R Datasheet

AT1511R

Manufacturer Part Number

AT1511R

Description

Manufacturer

Aimtron Technology

Datasheets

1.AT1511R.pdf (9 pages)

2.AT1511R.pdf (9 pages)

Specifications of AT1511R

Case

SOP/20

Date_code

04/P

Current page: 1 of 9
Download datasheet (274Kb)

Features

•Provides bias for GaAs and HEMT FETs

•Drives up to three FETs

•Dynamic FET protection

•Drain current set by external resistor

•Regulated negative rail generator requires

•Choice in drain voltage

•Wide supply voltage range

•Polarisation switch for LNBs - supporting

•22kHz tone detection for band switching

•Compliant with ASTRA control specifications

•SSOP surface mount package

Applications

˙Satellite receiver LNBs

˙Private mobile radio (PMR)

˙Cellular telephones

2F, No.10, Prosperity RD. II, Science-Based Industrial Park, Hsinchu 300,Taiwan, R.O.C.

Tel: 886-3-563-0878

Fax: 886-3-563-0879

Aimtron reserves the right without notice to change this circuitry and specifications.

only 2 external capacitors

zero volt gate switching

topology.

FET BIAS CONTROLLER AND TONE DETECTION

Description

The AT1511 includes bias circuits to drive up to

three external FETs. A control input to the

device selects either one of two FETs as

operational

methodology, the third FET is permanently

active. This feature is particularly used as an

LNB polarisation switch. Also specific to LNB

applications is the enhanced 22kHz tone

detection and logic output feature which is used

to enable high and low band frequency switching.

The detector has been specifically designed to

reject inerference such as low frequency signals

and DiSEqC

additional external components.

Drain current setting of the AT1511 is user

selectable over the range 0 to 15mA, this is

achieved with the addition of a single resistor.

The series also offers the choice of FET drain

voltage, the AT1511 gives 2 volts.

These devices are unconditionally stable over

the full working temperature with the FETs in

place,

recommended gate and drain capacitors. These

ensure RF stability and minimal injected noise.

It is possible to use less than the devices full

complement of FET bias controls, unused drain

and gate connections can be left open circuit

without affecting operation of the remaining bias

circuits.

In order to protect the external FETs the circuits

have been designed to ensure that, under any

conditions including power up/down transients,

the gate drive from the bias circuits cannot

exceed the range -3.5V to 1V. Furthermore if the

negative rail experiences a fault condition, such

as overload or short circuit, the drain supply to

the FETs will shut down avoiding excessive

current flow.

The AT1511 are available in SSOP20 for the

minimum in device size. Device operating

temperature is -40 to 70°C to suit a wide range

of environmental conditions.

Preliminary product Information

subject

using

tone bursts - without the use of

Email:

http://www.aimtron.com.tw

the

service@aimtron.com.tw

inclusion

gate

AT1511

switching

the

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