CY7C172A-25DMB Cypress Semiconductor Corporation., CY7C172A-25DMB Datasheet
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CY7C172A-25DMB
Manufacturer Part Number
CY7C172A-25DMB
Description
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
1.CY7C172A-20DMB.pdf
(9 pages)
Specifications of CY7C172A-25DMB
Date_code
00+
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C172A-25DMB
Manufacturer:
a
Quantity:
134
Features
Selection Guide
Cypress Semiconductor Corporation
Maximum Access Time (ns)
Maximum Operating
Current (mA)
• Automatic power-down when deselected
• CMOS for optimum speed/power
• High speed
• Transparent write (7C171A)
• Low active power
• Low standby power
• TTL-compatible inputs and outputs
• Capable of withstanding greater than 2001V electrostat-
ic discharge
— t
— 375 mW
— 93 mW
Logic Block Diagram
AA
= 15 ns
A
A
A
A
A
A
A
0
1
2
3
4
5
6
INPUT BUFFER
DECODER
128 x 128
COLUMN
ARRAY
Commercial
Military
POWER
DOWN
•
3901 North First Street
7C171A-15
7C172A-15
115
15
7C172A
7C171A
Functional Description
The CY7C171A and CY7C172A are high-performance CMOS
static RAMs organized as 4096 by 4 bits with separate I/O.
Easy memory expansion is provided by an active LOW chip
enable (CE) and three-state drivers. They have an automatic
power-down feature, reducing the power consumption by 77%
when deselected.
Writing to the device is accomplished when the chip enable
(CE) and write enable (WE) inputs are both LOW. Data on the
four input/output pins (I
location specified on the address pins (A
Reading the device is accomplished by taking chip enable
(CE) LOW, while write enable (WE) remains HIGH. Under
these conditions the contents of the memory location specified
on the address pins will appear on the four data output pins.
The output pins remain in a high-impedance state when write
enable (WE) is LOW (7C172A only), or chip enable is HIGH.
A die coat is used to insure alpha immunity.
I
I
I
I
O
O
O
O
CE
WE
7C171A-20
7C172A-20
0
1
2
3
C171A–1
0
1
2
3
20
80
90
•
San Jose
7C171A-25
7C172A-25
25
70
80
0
Pin Configurations
November 1988 - Revised April 1995
through I
GND
•
4K x 4 Static RAM
A
A
CE
A
A
A
A
A
A
10
11
I
I
5
6
7
8
9
with Separate I/O
4
3
2
CA 95134
1
2
3
4
5
6
7
8
9
10
11
12
Top View
DIP/SOJ
7C171A-35
7C172A-35
7C171A
7C172A
3
) is written into the memory
35
70
70
13
24
23
22
21
20
19
18
17
16
15
14
0
CY7C171A
CY7C172A
through A
V
A
A
A
A
I
I
O
O
O
O
WE
0
1
•
CC
3
2
1
0
0
1
2
3
408-943-2600
7C171A-45
7C172A-45
C171A–2
45
70
11
).