MT41J128M16HA-125IT:D Micron Semiconductor Products, MT41J128M16HA-125IT:D Datasheet

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MT41J128M16HA-125IT:D

Manufacturer Part Number
MT41J128M16HA-125IT:D
Description
Manufacturer
Micron Semiconductor Products
Datasheet

Specifications of MT41J128M16HA-125IT:D

Pack_quantity
1000
Comm_code
85423239
Lead_time
56
Eccn
EAR99
DDR3 SDRAM
MT41J512M4 – 64 Meg x 4 x 8 Banks
MT41J256M8 – 32 Meg x 8 x 8 Banks
MT41J128M16 – 16 Meg x 16 x 8 Banks
Features
Table 1: Key Timing Parameters
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. P 2/12 EN
• V
• 1.5V center-terminated push/pull I/O
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT)
• Programmable CAS READ latency (CL)
• Posted CAS additive latency (AL)
• Programmable CAS WRITE latency (CWL) based on
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• T
• Self refresh temperature (SRT)
• Write leveling
• Multipurpose register
• Output driver calibration
Notes:
for data, strobe, and mask signals
t
(via the mode register set [MRS])
– 64ms, 8192 cycle refresh at 0°C to 85°C
– 32ms, 8192 cycle refresh at 85°C to 95°C
CK
DD
C
Speed Grade
of 0°C to 95°C
-093
-107
= V
-125
-15E
-187E
1, 2, 3, 4
DDQ
1. Backward compatible to 1066, CL = 7 (-187E).
2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1600, CL = 11 (-125).
4. Backward compatible to 1866, CL = 13 (-107).
1, 2, 3
1, 2,
1,
= 1.5V ±0.075V
Products and specifications discussed herein are subject to change by Micron without notice.
Data Rate (MT/s)
2133
1866
1600
1333
1066
Target
14-14-14
13-13-13
11-11-11
t
9-9-9
7-7-7
RCD-
1
t
RP-CL
Options
• Configuration
• FBGA package (Pb-free) – x4, x8
• FBGA package (Pb-free) – x16
• Timing – cycle time
• Operating temperature
• Revision
– 512 Meg x 4
– 256 Meg x 8
– 128 Meg x 16
– 78-ball (8mm x 10.5mm) Rev. H,M,J,K
– 78-ball (9mm x 11.5mm) Rev. D
– 96-ball (9mm x 14mm) Rev. D
– 96-ball (8mm x 14mm) Rev. K
– 938ps @ CL = 14 (DDR3-2133)
– 1.071ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
Note:
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Not all options listed can be combined to
1
t
RCD (ns)
define an offered product. Use the part
catalog search on
for available offerings.
2Gb: x4, x8, x16 DDR3 SDRAM
13.09
13.91
13.75
13.5
13.1
C
C
≤ +95°C)
≤ +95°C)
t
RP (ns)
13.09
13.91
13.75
13.5
13.1
2006 Micron Technology, Inc. All rights reserved.
http://www.micron.com
Features
CL (ns)
13.09
13.91
13.75
13.5
13.1
:D/:H/:J/:K/
Marking
128M16
512M4
256M8
-187E
None
-093
-107
-125
-15E
DA
HX
HA
:M
JT
IT

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