VN2460N3G Supertex, VN2460N3G Datasheet
VN2460N3G
Manufacturer Part Number
VN2460N3G
Description
Manufacturer
Supertex
Datasheet
1.VN2460N3G.pdf
(4 pages)
Specifications of VN2460N3G
Date_code
07+
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
04/14/03
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Ordering Information
* Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.
** Die in wafer form.
Features
Applications
Distance of 1.6 mm from case for 10 seconds.
Free from secondary breakdown
Low input and output leakage
Low C
High input impedance and high gain
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
BV
BV
500V
DSS
DGS
ISS
/
and fast switching speeds
R
(max)
13Ω
DS(ON)
(min)
I
0.5A
D(ON)
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55°C to +150°C
VN2450N3
BV
BV
300°C
± 20V
TO-92
DGS
DSS
1
Order Number / Package
Advanced DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Product marking for TO-243AA:
Note: See Package Outline section for dimensions.
Where
TO-243AA*
VN2450N8
= 2-week alpha date code
G
TO-243AA
(SOT-89)
VN4E
D
S
D
VN2450NW
Die**
TO-92
S G D
VN2450
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