GLS36VF1601G-70-4I-B3KE Greenliant, GLS36VF1601G-70-4I-B3KE Datasheet

GLS36VF1601G-70-4I-B3KE

Manufacturer Part Number

GLS36VF1601G-70-4I-B3KE

Description

Manufacturer

Greenliant

Datasheet

1.GLS36VF1601G-70-4I-B3KE.pdf (37 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

GLS36VF1601G-70-4I-B3KE

Manufacturer:

SST

Quantity:

1 400

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FEATURES:

• Organized as 1M x16 or 2M x8

• Dual Bank Architecture for Concurrent

• Single 2.7-3.6V for Read and Write Operations

• Superior Reliability

• Low Power Consumption:

• Hardware Sector Protection/WP# Input Pin

• Hardware Reset Pin (RST#)

• Byte# Pin

• Sector-Erase Capability

• Chip-Erase Capability

PRODUCT DESCRIPTION

The GLS36VF1601E and GLS36VF1602E are 1M x16 or

2M x8 CMOS Concurrent Read/Write Flash Memory man-

ufactured with Greenliant’s proprietary, high performance

CMOS SuperFlash memory technology. The split-gate cell

design and thick oxide tunneling injector attain better reli-

ability and manufacturability compared with alternate

approaches. The devices write (Program or Erase) with a

2.7-3.6V power supply and conform to JEDEC standard

pinouts for x8/x16 memories.

Featuring high performance Program, these devices pro-

vide a typical Program time of 7 µsec and use the Toggle

Bit, Data# Polling, or RY/BY# to detect the completion of

the Program or Erase operation. To protect against inad-

Read/Write Operation

– 16 Mbit Bottom Sector Protection

– 16 Mbit Top Sector Protection

– Endurance: 100,000 cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 6 mA typical

– Standby Current: 4 µA typical

– Auto Low Power Mode: 4 µA typical

– Protects the 4 outermost sectors (8 KWord)

– Resets the internal state machine to reading

– Selects 8-bit or 16-bit mode

– Uniform 2 KWord sectors

- GLS36VF1601E: 12 Mbit + 4 Mbit

- GLS36VF1602E: 4 Mbit + 12 Mbit

in the larger bank by driving WP# low and

unprotects by driving WP# high

array data

16 Mbit (x8/x16) Concurrent SuperFlash

GLS36VF1601E / GLS36VF1602E

GLS36VF1601E / 1602E16Mb (x8/x16) Concurrent SuperFlash

www.greenliant.com

• Block-Erase Capability

• Erase-Suspend / Erase-Resume Capabilities

• Security ID Feature

• Fast Read Access Time

• Latched Address and Data

• Fast Erase and Program (typical):

• Automatic Write Timing

• End-of-Write Detection

• CMOS I/O Compatibility

• Conforms to Common Flash Memory Interface (CFI)

• JEDEC Standards

• Packages Available

vertent write, the devices have on-chip hardware and Soft-

ware Data Protection schemes. Designed, manufactured,

and tested for a wide spectrum of applications, these

devices are offered with a guaranteed endurance of 10,000

cycles. Data retention is rated at greater than 100 years.

These devices are suited for applications that require con-

venient and economical updating of program, configura-

tion, or data memory. For all system applications, the

devices significantly improve performance and reliability,

while lowering power consumption. Since for any given

voltage range, the SuperFlash technology uses less cur-

rent to program and has a shorter erase time, the total

energy consumed during any Erase or Program operation

– Uniform 32 KWord blocks

– Greenliant: 128 bits

– User: 128 bits

– 70 ns

– Sector-Erase Time: 18 ms

– Block-Erase Time: 18 ms

– Chip-Erase Time: 35 ms

– Program Time: 7 µs

– Internal V

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

– Flash EEPROM Pinouts and command sets

– 48-ball TFBGA (6mm x 8mm)

– 48-lead TSOP (12mm x 20mm)

Generation

S71274-05-000

Data Sheet

05/10

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