SSD01N60 SECOS [SeCoS Halbleitertechnologie GmbH], SSD01N60 Datasheet - Page 4
SSD01N60
Manufacturer Part Number
SSD01N60
Description
N-Channel Enhancement Mode Power Mos.FET
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
1.SSD01N60.pdf
(5 pages)
SSD01N60
1.6A, 600V,R
8
Ω
DS(ON)
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 5