HX6408-EFM HONEYWELL [Honeywell Solid State Electronics Center], HX6408-EFM Datasheet

HX6408-EFM

Manufacturer Part Number

HX6408-EFM

Description

512k x 8 STATIC RAM

Manufacturer

HONEYWELL [Honeywell Solid State Electronics Center]

Datasheet

1.HX6408-EFM.pdf (11 pages)

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HX6408

Advanced Information

HX6408

512k x 8 STATIC RAM

The 512K x 8 Radiation Hardened Static RAM is a high

performance 524,288 word x 8-bit static random access

memory with optional industry-standard functionality. It is

fabricated with Honeywell’s radiation hardened Silicon On

Insulator (SOI) technology, and is designed for use in low

voltage systems operating in radiation environments. The

RAM operates over the full military temperature range and

requires only a single 3.3 V ± 0.3V power supply. Power

consumption is typically <30 mW @ 1MHz in write mode,

<14 mW @ 1MHz in read mode, and is less than 5 mW

when in standby mode.

Honeywell’s enhanced RICMOS™(Radiation Insensitive

CMOS) SOI V technology is radiation hardened through the

use of advanced and proprietary design, layout and process

hardening techniques.

FEATURES

www.honeywell.com

≥1x10

≤1x10

Fabricated with RICMOS™ V

Silicon On Insulator (SOI)

0.35 mm Process (L

Total Dose ≥ 3x10

Neutron ≥1x10

Dynamic and Static Transient Upset

Dose Rate Survivability ≥1x10

Soft Error Rate

-10

rad(Si)/s (3.3 V)

Upsets/bit-day (3.3 V)

and 1X10

-2

eff

= 0.28 µm)

rad(SiO

rad(Si)/s

)

≤20 ns, (3.3 V), -55 to 125°C

<14 mW @ 1MHz Read

<30 mW @ 1MHz Write

<5 mW Standby mode

No Latchup

Read/Write Cycle Times

Typical Operating Power (3.3 V)

Asynchronous Operation

CMOS Compatible I/O

The RICMOS™ V low power process is a SOI CMOS

technology with an 80 Å gate oxide and a minimum

drawn feature size of 0.35 µm. Additional features

include tungsten via and contact plugs, Honeywell’s

proprietary SHARP planarization process and a lightly

doped drain (LDD) structure for improved short

channel reliability. A seven transistor (7T) memory cell

is used for superior single event upset hardening,

while three layer metal power busing and the low

collection volume SOI substrate provide improved

dose rate hardening.

Single Power Supply,

3.3 V ± 0.3 V

Operating Range is

-55°C to +125°C

36-Lead Flat Pack Package

Optional Low Power Sleep

Mode

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