SI4378DY-E3 VISHAY [Vishay Siliconix], SI4378DY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4378DY-E3
• Description: N-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72918
S-40854—Rev. A, 03-May-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.006
0.005
0.004
0.003
0.002
0.001
0.000
6
5
4
3
2
1
0
50
10
1
0.00
0
0
V
I
D
10
DS
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Drain Current
= 25 A
0.2
= 10 V
V
Q
SD
T
g
J
20
= 150_C
− Total Gate Charge (nC)
− Source-to-Drain Voltage (V)
I
20
D
0.4
V
− Drain Current (A)
Gate Charge
GS
30
= 4.5 V
30
0.6
V
40
GS
= 2.5 V
40
0.8
50
T
J
50
= 25_C
1.0
60
New Product
60
70
1.2
0.015
0.012
0.009
0.006
0.003
0.000
10000
8000
6000
4000
2000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
−25
V
I
D
GS
= 25 A
V
2
V
GS
4
= 4.5 V
DS
T
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
Capacitance
25
C
4
oss
8
I
Vishay Siliconix
D
C
= 25 A
50
iss
6
12
75
Si4378DY
C
rss
100
www.vishay.com
8
16
125
10
150
20
3