N28F010-90 INTEL [Intel Corporation], N28F010-90 Datasheet - Page 11
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N28F010-90
Manufacturer Part Number
N28F010-90
Description
1024K (128K x 8) CMOS FLASH MEMORY
Manufacturer
INTEL [Intel Corporation]
Datasheet
1.N28F010-90.pdf
(30 pages)
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Part Number:
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NOTES
1 See DC Characteristics for the value of V
V
2 Program Verify is only performed after byte program-
ming A final read compare may be performed (option-
al) after the register is written with the Read command
PPL
Figure 5 28F010 Quick Pulse Programming Algorithm
290207–5
PPH
and
Operation
Standby
Write
Write
Standby
Write
Standby
Read
Standby
Write
Standby
3 Refer to principles of operation
4 CAUTION The algorithm MUST BE FOLLOWED
to ensure proper and reliable operation of the de-
vice
Bus
Command
Set-up
Program
Program
Program
Verify
Read
(2)
Wait for V
Initialize Pulse-Count
Data
Valid Address Data
Duration of Program
Operation (t
Data
Operation
t
Read Byte to Verify
Programming
Compare Data Output to Data
Expected
Data
Register for Read Operations
Wait for V
WHGL
e
e
e
40H
C0H Stops Program
00H Resets the
Comments
PP
PP
(3)
WHWH1
Ramp to V
Ramp to V
)
28F010
PPH
PPL
(1)
(1)
11