K6X4016T3F-F SAMSUNG [Samsung semiconductor], K6X4016T3F-F Datasheet - Page 4

• Manufacturer Part Number: K6X4016T3F-F
• Description: 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Commercial Product: T
2. Overshoot: V
3. Undershoot: -2.0V in case of pulse width
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
K6X4016T3F Family
Supply voltage
Ground
Input high voltage
Input low voltage
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
Input capacitance
Input/Output capacitance
Industrial Product: T
Automotive Product: T
CC
Item
+2.0V in case of pulse width
Item
A
=-40 to 85 C, otherwise specified.
Item
A
A
=-40 to 125 C, otherwise specified.
1)
=0 to 70 C, otherwise specified.
(f=1MHz, T
Symbol
A
I
I
V
I
=25 C)
V
I
I
I
CC1
CC2
SB1
I
CC
LO
SB
LI
OL
OH
30ns.
Symbol
30ns.
C
C
V
CS=V
I
Cycle time=1 s, 100% duty, I
V
Cycle time=Min
V
I
I
CS=V
CS Vcc-0.2V, Other
inputs=0~Vcc
IN
IO
IO
OL
OH
IL
IN
IN
=0mA, CS=V
=Vss to Vcc
=2.1mA
=V
=-1.0mA
0.2V or V
Symbol
IH
IH
IH
Vcc
Vss
V
, Other inputs=V
V
or OE=V
or V
IH
IL
IL
IN
2)
IL
Test Condition
, 100% duty, I
Vcc-0.2V
IH
, V
or WE=V
IN
V
V
Test Conditions
=V
IN
IO
=0V
=0V
4
IL
1)
-0.2
IL
Min
2.7
2.2
or V
or V
0
3)
IL
IO
IH
V
IH
IO
=0mA CS 0.2V,
IO
, Read
=0mA, CS=V
=Vss to Vcc
K6X4016T3F-Q
K6X4016T3F-B
K6X4016T3F-F
3.0/3.3
Typ
0
-
-
Min
IL,
-
-
Vcc+0.2
CMOS SRAM
Min
2.4
Max
-1
-1
Max
10
3.6
0.6
-
-
-
-
-
-
-
-
8
0
2)
Typ
-
-
-
-
-
-
-
-
-
-
-
August 2003
Revision 1.0
Max
0.4
0.3
25
10
10
20
1
1
2
3
-
Unit
Unit
pF
pF
V
V
V
V
Unit
mA
mA
mA
mA
V
V
A
A
A
A
A