MX29LV640BXBC-90 MCNIX [Macronix International], MX29LV640BXBC-90 Datasheet - Page 62

no-image

MX29LV640BXBC-90

Manufacturer Part Number
MX29LV640BXBC-90
Description
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
Manufacturer
MCNIX [Macronix International]
Datasheet
Note:
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA=25°C, f=1.0MHz
P/N:PM0920
LATCH-UP CHARACTERISTICS
TSOP PIN CAPACITANCE
DATA RETENTION
ERASE AND PROGRAMMING PERFORMANCE (1)
PARAMETER
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Erase/Program Cycles
Parameter Symbol
CIN
COUT
CIN2
Parameter
Minimum Pattern Data Retention Time
Input Voltage with respect to GND on all pins except I/O pins
Input Voltage with respect to GND on all I/O pins
Current
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.
2. Typical program and erase times assume the following condition= 25°C,3.0V VCC.
1. Not 100% Tested, Excludes external system level over head.
Additionally, programming typicals assume checkerboard pattern.
Parameter Description
Input Capacitance
Output Capacitance
Control Pin Capacitance
Word Mode
Byte Mode
62
100,000
MIN.
150
125
Test Conditions
VOUT=0
Test Set
VIN=0
VIN=0
MX29LV640T/B
TYP.(2)
LIMITS
0.9
45
11
50
45
9
TYP
Min
8.5
7.5
20
10
6
-100mA
MAX.
360
160
140
300
-1.0V
-1.0V
MIN.
15
65
MAX
7.5
12
9
REV. 1.2, NOV. 05, 2003
Years
Years
Unit
UNITS
Cycles
Vcc + 1.0V
+100mA
sec
sec
sec
sec
UNIT
us
us
13.5V
MAX.
pF
pF
pF

Related parts for MX29LV640BXBC-90