AS4LC4M16DG-5S/XT AUSTIN [Austin Semiconductor], AS4LC4M16DG-5S/XT Datasheet - Page 12
AS4LC4M16DG-5S/XT
Manufacturer Part Number
AS4LC4M16DG-5S/XT
Description
4 MEG x 16 DRAM Extended Data Out (EDO) DRAM
Manufacturer
AUSTIN [Austin Semiconductor]
Datasheet
1.AS4LC4M16DG-5SXT.pdf
(25 pages)
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NOTES (Continued):
35. V
3ns, and the pulse width cannot be greater than one third of the
cycle rate. V
3ns, and the pulse width cannot be greater then one third of the
cycle rate.
36. NC pins are assumed to be left floating and are not tested for
leakage.
37. Self refresh and extended refresh for the device requires that
at least 4,096 cycles be completed every 128ms.
38. Self refresh version on IT temp parts only.
AS4LC4M16
Rev. 1.1 6/05
IH
overshoot: V
IL
undershoot: V
IH
(MAX) - V
IL
(MIN) = -2V for a pulse width £
Austin Semiconductor, Inc.
CC
+ 2V for a pulse width £
12
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS4LC4M16
DRAM
DRAM
DRAM
DRAM
DRAM
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