2SB772-X-T60-K UTC [Unisonic Technologies], 2SB772-X-T60-K Datasheet - Page 2

• Manufacturer Part Number: 2SB772-X-T60-K
• Description: MEDIUM POWER LOW VOLTAGE TRANSISTOR
• Manufacturer: UTC [Unisonic Technologies]

2SB772
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(Note 1)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Note 1: Pulse test: P
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation ( Ta=25 ℃)
Junction Temperature
Storage Temperature
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANGE
RANK
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
W
<300μs, Duty Cycle<2%
PARAMETER
FE2
100 ~ 200
SYMBOL
V
V
Q
BV
BV
BV
CE(SAT)
BE(SAT)
h
h
Cob
I
I
I
CBO
CEO
EBO
FE1
FE2
f
CBO
CEO
T
EBO
TO-92NL
TO-251/TO-252/
TO-126/TO-126C
(Ta = 25℃)
I
I
I
V
V
V
V
V
I
I
V
V
C
C
E
C
C
(Ta= 25℃, unless otherwise specified)
CB
CE
EB
CE
CE
CE
CB
=-100μA, I
=-1mA, I
=-100μA, I
=-2A, I
=-2A, I
DC
Pulse
=-3V, I
=-30V ,I
=-30V ,I
=-2V, I
=-2V, I
=-5V, I
=-10V, I
TEST CONDITIONS
B
B
=-0.2A
=-0.2A
B
C
C
C
C
=0
=0
=-20mA
=-1A
=-0.1A
E
B
E
C
E
=0
=0
=0,f=1MHz
=0
=0
SYMBOL
V
V
V
T
I
P
T
CBO
CEO
EBO
I
STG
CP
I
160 ~ 320
C
B
C
J
P
PNP SILICON TRANSISTOR
-55 ~ +150
MIN
RATINGS
100
-40
-30
30
-5
+150
-0.6
-40
-30
0.5
-5
-3
-7
1
TYP
-0.3
-1.0
200
150
80
45
200 ~ 400
-1000
-1000
-1000
MAX
-0.5
-2.0
400
E
QW-R213-016,E
UNIT
W
W
℃
℃
V
V
V
A
A
A
UNIT
MHz
2 of 4
nA
nA
nA
pF
V
V
V
V
V