TIM3742-30SL-341_06 TOSHIBA [Toshiba Semiconductor], TIM3742-30SL-341_06 Datasheet

TIM3742-30SL-341_06

Manufacturer Part Number

TIM3742-30SL-341_06

Description

MICROWAVE POWER GaAs FET

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.TIM3742-30SL-341_06.pdf (4 pages)

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u The information contained herein is presented only as a guide for the applications of our products. No responsibility is

MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

n LOW INTERMODULATION DISTORTION

n HIGH POWER

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

FEATURES

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

Gain Flatness

Power Added Efficiency

3rd Order Intermodulation

Distortion

Drain Current

Channel Temperature Rise

Recommended gate resistance(Rg) : Rg= 28 (MAX.)

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown

Voltage

Thermal Resistance

IM3=-45 dBc at Po= 34.5 dBm,

Single Carrier Level

P1dB=45.0 dBm at 3.3GHz to 3.6GHz

CHARACTERISTICS

SYMBOL

th(c-c)

GSoff

DS1

DS2

DSS

GSO

Tch

1dB

add

Channel to Case

(VDS X IDS + Pin – P1dB)

(Single Carrier Level)

= 10A

= 100mA

= -350 A

Two-Tone Test

= 3.3 to 3.6GHz

CONDITIONS

= 3V

Po=34.5 dBm

= 0V

n HIGH GAIN

n BROAD BAND INTERNALLY MATCHED FET

n HERMETICALLY SEALED PACKAGE

X Rth(c-c)

G1dB=11.0dB at 3.3GHz to 3.6GHz

MICROWAVE POWER GaAs FET

=10

TIM3742-30SL-341

UNIT

dBm

dBc

C/W

MIN.

44.0

10.0

MIN.

-1.0

-42

-5

Rev. Jun. 2006

TYP. MAX.

45.0

11.0

TYP. MAX.

6300

7.0

-45

7.0

-2.5

1.0

100

8.0

-4.0

0.8

1.3

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TIM3742-30SL-341_06 Summary of contents

Page 1

... SYMBOL CONDITIONS 10A GSoff 100mA DSS -350 A GSO GS R Channel to Case th(c-c) TIM3742-30SL-341 UNIT MIN. TYP. MAX. dBm 44.0 45.0 dB 10.0 11 dBc -42 -45 A 7.0 C UNIT MIN. TYP. MAX. mS 6300 V -1.0 -2 C/W 1.0 Rev. Jun. 2006 8 ...

Page 2

... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) 4 – C1.0 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM3742-30SL-341 SYMBOL ...

Page 3

... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V Pin=34.0dBm 3.3 Output Power(Pout) vs. Input Power(Pin) 48 freq.=3.6GHz 47 V =10V TIM3742-30SL-341 3.4 3.5 Frequency (GHz) Pout add 32 34 Pin(dBm ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc) 120 100 IM3 vs. Output Power Characteristics -10 V =10V freq.=3.6GHz -20 f=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM3742-30SL-341 80 120 Tc 200 160 38 40 ...

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